Open Access
Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films
Dung Van Hoang
1
,
Nam T. Vu
2
,
Nga Thi Do
3
,
Anh H. Pham
1
,
Truong Huu Nguyen
1
,
Jer-Lai Kuo
4
,
Thang T. Phan
2
,
Vinh Hung Tran
1
1
Vietnam National University, HoChiMinh City 700000, Viet Nam
|
2
Vietnam National University, HoChiMinh City, 700000, Viet Nam
|
Publication type: Journal Article
Publication date: 2022-01-01
scimago Q1
wos Q1
SJR: 1.971
CiteScore: 16.8
Impact factor: 9.6
ISSN: 23528478, 23528486
Metals and Alloys
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Abstract
This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films. By combining experimental evidences and theoretical results, we find out that hydrogen located at oxygen vacancy sites (H O ) is the main factor gives rise to increase simultaneously mobility and carrier concentration which has not been mentioned before. Introducing appropriate hydrogen content during sputtering not only results in crystalline relaxation but also supports doping Al into ZnO, increasing carrier concentration and electron mobility in the film. First principles calculations confirmed hydrogen substitutional stability for oxygen vacancy, significantly reducing electron conductivity effective mass and hence increasing electron mobility. In particular, 0.8% hydrogen partial pressure ratio achieved 61 cm 2 V −1 s −1 maximum electron mobility, optical transmittance above 82% in visible and near-infrared regions, and 2 × 10 20 cm −3 carrier concentrations for H Al co-doped ZnO film. These values approach ideal electrical and optical properties for transparent conducting oxide films. The presence of one maximum electron mobility was attributed to competition between increasing mobility due to restoring effective electron mass and hydrogen passivation of native defects, and decreased electron mobility due to electron-phonon scattering. • Experimental and computational results show that H O is the main factor controlling electron mobility & carrier concentration. • Hydrogen supports Al 3+ ions substitution for Zn 2+ ions increasing carrier concentration. • Hydrogen at zinc vacancy sites reduces ionized scattering centers, improving crystal quality and electron mobility. • Hydrogen substitution for V O sites affects the effective electron mass m∗, controlling electron mobility. • The highest mobility obtained in this study is 61 cm 2 V −1 s −1 for Al H co-doped ZnO thin film.
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Total citations:
18
Citations from 2024:
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(22.23%)
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GOST
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Van Hoang D. et al. Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films // Journal of Materiomics. 2022. Vol. 8. No. 1. pp. 123-135.
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Van Hoang D., Vu N. T., Do N. T., Pham A. H., Nguyen T. H., Kuo J., Phan T. T., Tran V. H. Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films // Journal of Materiomics. 2022. Vol. 8. No. 1. pp. 123-135.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1016/j.jmat.2021.04.011
UR - https://doi.org/10.1016/j.jmat.2021.04.011
TI - Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films
T2 - Journal of Materiomics
AU - Van Hoang, Dung
AU - Vu, Nam T.
AU - Do, Nga Thi
AU - Pham, Anh H.
AU - Nguyen, Truong Huu
AU - Kuo, Jer-Lai
AU - Phan, Thang T.
AU - Tran, Vinh Hung
PY - 2022
DA - 2022/01/01
PB - Chinese Ceramic Society
SP - 123-135
IS - 1
VL - 8
SN - 2352-8478
SN - 2352-8486
ER -
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BibTex (up to 50 authors)
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@article{2022_Van Hoang,
author = {Dung Van Hoang and Nam T. Vu and Nga Thi Do and Anh H. Pham and Truong Huu Nguyen and Jer-Lai Kuo and Thang T. Phan and Vinh Hung Tran},
title = {Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films},
journal = {Journal of Materiomics},
year = {2022},
volume = {8},
publisher = {Chinese Ceramic Society},
month = {jan},
url = {https://doi.org/10.1016/j.jmat.2021.04.011},
number = {1},
pages = {123--135},
doi = {10.1016/j.jmat.2021.04.011}
}
Cite this
MLA
Copy
Van Hoang, Dung, et al. “Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films.” Journal of Materiomics, vol. 8, no. 1, Jan. 2022, pp. 123-135. https://doi.org/10.1016/j.jmat.2021.04.011.