Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
Guillermo Vinuesa
1
,
H. García
1
,
Samuel Poblador
2
,
S Poblador
2
,
M. Serra González
2
,
Mireia Bargallo Gonzalez
2
,
Francesca Campabadal
2
,
Helena Castán
1
,
Salvador Dueñas
1
Publication type: Journal Article
Publication date: 2024-02-01
scimago Q2
wos Q3
SJR: 0.591
CiteScore: 5.4
Impact factor: 2.7
ISSN: 0167577X, 18734979
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
In this letter, we study the impact of the temperature on the resistive switching effect of TiN/Ti/HfO2/W metal–insulator-metal devices. An analysis of the conduction mechanisms is made, with the low resistance state being ruled by nearest neighbor hopping, while the conduction in the high resistance state is dominated by Schottky emission. Taking into account the filamentary mechanism behind the resistive switching effect, a thorough analysis of the Schottky emission allows for the calculation of the gap between conductive filament tip and metal electrode in the high resistance state. We report an increase of this gap when temperature lowers below a certain value. Moreover, the mentioned gap adopts values of integer multiples of the the mean distance between traps obtained by the hopping model.
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Metrics
7
Total citations:
7
Citations from 2024:
5
(71.43%)
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GOST
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Vinuesa G. et al. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM // Materials Letters. 2024. Vol. 357. p. 135699.
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Vinuesa G., García H., Poblador S., Poblador S., Serra González M., Bargallo Gonzalez M., Campabadal F., Castán H., Dueñas S. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM // Materials Letters. 2024. Vol. 357. p. 135699.
Cite this
RIS
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TY - JOUR
DO - 10.1016/j.matlet.2023.135699
UR - https://linkinghub.elsevier.com/retrieve/pii/S0167577X23018840
TI - Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
T2 - Materials Letters
AU - Vinuesa, Guillermo
AU - García, H.
AU - Poblador, Samuel
AU - Poblador, S
AU - Serra González, M.
AU - Bargallo Gonzalez, Mireia
AU - Campabadal, Francesca
AU - Castán, Helena
AU - Dueñas, Salvador
PY - 2024
DA - 2024/02/01
PB - Elsevier
SP - 135699
VL - 357
SN - 0167-577X
SN - 1873-4979
ER -
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BibTex (up to 50 authors)
Copy
@article{2024_Vinuesa,
author = {Guillermo Vinuesa and H. García and Samuel Poblador and S Poblador and M. Serra González and Mireia Bargallo Gonzalez and Francesca Campabadal and Helena Castán and Salvador Dueñas},
title = {Impact of the temperature on the conductive filament morphology in HfO2-based RRAM},
journal = {Materials Letters},
year = {2024},
volume = {357},
publisher = {Elsevier},
month = {feb},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0167577X23018840},
pages = {135699},
doi = {10.1016/j.matlet.2023.135699}
}