Microelectronics Journal, volume 39, issue 2, pages 237-240
Self-organization of a 2D lattice on a surface of Ge single crystal after irradiation with Nd:YAG laser
A. Medvid’
1
,
A Mychko
1
,
P Onufrievs
1
Publication type: Journal Article
Publication date: 2008-02-01
Journal:
Microelectronics Journal
scimago Q3
wos Q4
SJR: 0.390
CiteScore: 4.0
Impact factor: 1.9
ISSN: 09598324, 00262692, 18792391
General Engineering
Abstract
Experimentally observed self-organization of a 2D lattice on the surface of Ge single crystal after irradiation by pulsed Nd:YAG laser is reported. The 2D lattice consists of nano-size hills arranged in a pattern of C6i point group symmetry and is characterized by translational symmetry with the period of [email protected] Calculations of time-dependent distribution of temperature in the bulk of the Ge sample are presented to explain the phenomenon. The calculations show that overheating of the crystal lattice occurs at laser radiation intensities exceeding 30MW/cm^2. According to synergetic ideas, the presence of the non-equilibrium liquid phase of Ge and a huge gradient of temperature (~3x10^8K/m) can lead to self-organization of the 2D lattice similar to Benard cells.
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