Materials Science in Semiconductor Processing, volume 188, pages 109186
Thermal stability and annealing of intrinsic point defects in beta-Ga2O3
A. ALESSI
,
Jun Lin
,
V.I Safarov
,
H.-J. Drouhin
,
L. Romero Vega
,
O Cavani
,
R Grasset
,
H. JAFFRÈS
,
M. KONCZYKOWSKI
Publication type: Journal Article
Publication date: 2025-03-01
scimago Q1
SJR: 0.732
CiteScore: 8.0
Impact factor: 4.2
ISSN: 13698001, 18734081
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