Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, volume 307, pages 154-157
Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing
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Industrial Research Limited, 69 Gracefield Rd, Lower Hutt 5040, New Zealand
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Publication type: Journal Article
Publication date: 2013-07-01
Quartile SCImago
Q2
Quartile WOS
Q3
Impact factor: 1.3
ISSN: 0168583X
Instrumentation
Nuclear and High Energy Physics
Abstract
Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 μm, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems.
Top-30
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Citations by publishers
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1 publication, 11.11%
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American Chemical Society (ACS)
1 publication, 11.11%
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1 publication, 11.11%
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Carder D. et al. Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2013. Vol. 307. pp. 154-157.
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Carder D., Markwitz A., Reeves R. S., Kennedy J. F., Fang F. Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2013. Vol. 307. pp. 154-157.
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TY - JOUR
DO - 10.1016/j.nimb.2012.12.078
UR - https://doi.org/10.1016/j.nimb.2012.12.078
TI - Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing
T2 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
AU - Carder, D.A.
AU - Markwitz, Andreas
AU - Reeves, R S
AU - Kennedy, John F
AU - Fang, F
PY - 2013
DA - 2013/07/01 00:00:00
PB - Elsevier
SP - 154-157
VL - 307
SN - 0168-583X
ER -
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@article{2013_Carder,
author = {D.A. Carder and Andreas Markwitz and R S Reeves and John F Kennedy and F Fang},
title = {Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing},
journal = {Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms},
year = {2013},
volume = {307},
publisher = {Elsevier},
month = {jul},
url = {https://doi.org/10.1016/j.nimb.2012.12.078},
pages = {154--157},
doi = {10.1016/j.nimb.2012.12.078}
}