Thermal and photochemical degradation of CsGeI3 and CsGeBr3: XPS and optical studies

The toxicity of complex lead halides significantly limits the commercialization and practical application of perovskite solar cells. In recent days, lead-free complex lead halides with a perovskite structure have become increasingly popular, among which germanium systems are the least studied. Here we present for the first time a systematic study of the thermal and photochemical stability of perovskite thin films of CsGeI3 and CsGeBr3. The measurements of optical absorbance and X-ray photoelectron spectra (XPS) of core levels and valence bands of Ge-based halide perovskites after light soaking and heat stress were thoroughly performed. It has been found the effect of thermal and photochemical degradation of Ge perovskites which is accompanied by reduction of I:Ge and Br:Ge ratios and appearance of tetravalent metal species fixed in XPS Ge 2p and Ge 3d spectra. The XPS O 1s measurements of irradiated and annealed Ge-based perovskites and their comparison with spectra of GeO2 have shown that formation of Ge4+-species is not due to metal oxidation but owing to defect-mediated hole-doping. While the Ge2+→Ge4+ process lowers the thermal and photochemical stability of Ge-based perovskites and limits their use in photovoltaics, the temperature induced hole doping is favorable for thermoelectric applications.