Physica E: Low-Dimensional Systems and Nanostructures, volume 44, issue 1, pages 202-206
Exciton luminescence in In0.3Ga0.7As/GaAs quantum well heterostructures
N.N. Syrbu
1
,
A. Dorogan
1
,
N Dragutan
1
,
T Vieru
1
,
V Ursaki
2
1
2
Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Republic of Moldova
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Publication type: Journal Article
Publication date: 2011-10-01
scimago Q2
wos Q2
SJR: 0.529
CiteScore: 7.3
Impact factor: 2.9
ISSN: 13869477, 18731759
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In 0.3 Ga 0.7 As/GaAs quantum wells . The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative E b –hh1, E b –lh1 transitions in the buffer GaAs layer are observed in the region of 1.5 eV. ► Luminescence due to recombination of excitons in GaAs/In 0.3 Ga 0.7 As quantum wells studied. ► Emission maxima related to excitons formed with heavy and light holes found. ► Emission bands due to e1–hh1 and e1–lh1 transitions found to have a doublet character. ► Doublet emission is explained by the exchange interaction of excitons in quantum wells. ► Emission bands due to radiative transitions in the buffer GaAs layer observed around 1.5 eV.
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