High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction
A. Alzeidan
1
,
T. F. Cantalice
1
,
Kathryn E. Sautter
2
,
Kevin D. Vallejo
2
,
Paul K. Simmonds
2, 3, 4
,
A.A Quivy
1
Publication type: Journal Article
Publication date: 2024-08-01
scimago Q1
wos Q1
SJR: 0.825
CiteScore: 7.7
Impact factor: 4.9
ISSN: 09244247, 18733069
Abstract
We studied the impact of surface reconstruction on the performance of infrared photodetectors containing InAs/GaAs submonolayer quantum dots (SMLQDs) grown by molecular beam epitaxy. Adjusting the substrate temperature before InAs deposition allowed us to move between the conventional c(4×4) reconstruction of the GaAs(001) surface, observed at low growth temperatures, and the (2×4) reconstruction which can only be stabilized at higher sample temperatures than those commonly used to deposit InAs. Photodetectors based on SMLQDs grown on such a (2×4) surface reconstruction outperformed those grown on a c(4×4) reconstruction and provided specific detectivities as high as 8.3×1011 cm Hz1/2 W-1 at 12 K. This increase in performance is due to the nucleation of true two-dimensional InAs islands which are the building blocks of SMLQDs and can only form on a (2×4)-reconstructed GaAs(001) surface.
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Total citations:
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Citations from 2024:
4
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Alzeidan A. et al. High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction // Sensors and Actuators, A: Physical. 2024. Vol. 374. p. 115464.
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Alzeidan A., Cantalice T. F., Sautter K. E., Vallejo K. D., Simmonds P. K., Quivy A. High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction // Sensors and Actuators, A: Physical. 2024. Vol. 374. p. 115464.
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TY - JOUR
DO - 10.1016/j.sna.2024.115464
UR - https://linkinghub.elsevier.com/retrieve/pii/S0924424724004588
TI - High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction
T2 - Sensors and Actuators, A: Physical
AU - Alzeidan, A.
AU - Cantalice, T. F.
AU - Sautter, Kathryn E.
AU - Vallejo, Kevin D.
AU - Simmonds, Paul K.
AU - Quivy, A.A
PY - 2024
DA - 2024/08/01
PB - Elsevier
SP - 115464
VL - 374
SN - 0924-4247
SN - 1873-3069
ER -
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@article{2024_Alzeidan,
author = {A. Alzeidan and T. F. Cantalice and Kathryn E. Sautter and Kevin D. Vallejo and Paul K. Simmonds and A.A Quivy},
title = {High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2×4) surface reconstruction},
journal = {Sensors and Actuators, A: Physical},
year = {2024},
volume = {374},
publisher = {Elsevier},
month = {aug},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0924424724004588},
pages = {115464},
doi = {10.1016/j.sna.2024.115464}
}