Solar Energy

, volume 157 , pages 216-226

Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance

Qiang Li ¹

Kai Shen ¹

Ruilong Yang ¹

Yongming Zhao ²

Shulong Lu ²

Rongxin Wang ²

Jianrong Dong ²

Deliang Wang ³

Hide authors affiliations Show authors affiliations: 3 affiliations

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China |

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People’s Republic of China |

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China |

Publication type: Journal Article

Publication date: 2017-11-01

Elsevier

Solar Energy

scimago Q1

wos Q2

SJR: 1.314

CiteScore: 12.6

Impact factor: 6.6

ISSN: 0038092X, 14711257

DOI: 10.1016/j.solener.2017.08.023

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General Materials Science

Renewable Energy, Sustainability and the Environment

Abstract

Comparative study of GaAs and CdTe solar cell under low-intensity light irradiance was carried out to study the cell device performance in response to the changed light irradiance intensity. For highly efficient GaAs solar cell, the series Rs and the shunt Rp resistance were found to be low/high enough to have almost undetectable negative effect on the cell device performance at low-intensity light irradiance. The robust diode parameters guaranteed good cell performance at low-intensity light irradiance. An ideal logarithmic function was established to describe the variation of cell efficiency with light irradiance intensity for GaAs solar cell. For CdTe polycrystalline solar cell, the relatively large series resistance Rs and small shunt resistance Rp, compared to that of the GaAs solar cell, significantly decreased the cell fill factor. With increased light illumination intensity, both the diode ideality factor A and the reverse saturation current density J0 were increased due to the high density of interface states at the CdS/CdTe junction. The comparative study and conclusions drawn in this work provide device fabrication improvement direction for the CdTe solar cell.

Found

1 citation

Singh Trilok

90 publications, 3 538 citations, 48 reviews

h-index: 29

Indian Institute of Technology Delhi

Research interests

Thin films

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GOST |

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GOST Copy

Li Q. et al. Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance // Solar Energy. 2017. Vol. 157. pp. 216-226.

GOST all authors (up to 50) Copy

Li Q., Shen K., Yang R., Zhao Y., Lu S., Wang R., Dong J., Wang D. Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance // Solar Energy. 2017. Vol. 157. pp. 216-226.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1016/j.solener.2017.08.023

UR - https://doi.org/10.1016/j.solener.2017.08.023

TI - Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance

T2 - Solar Energy

AU - Li, Qiang

AU - Shen, Kai

AU - Yang, Ruilong

AU - Zhao, Yongming

AU - Lu, Shulong

AU - Wang, Rongxin

AU - Dong, Jianrong

AU - Wang, Deliang

PY - 2017

DA - 2017/11/01

PB - Elsevier

SP - 216-226

VL - 157

SN - 0038-092X

SN - 1471-1257

ER -

BibTex

Cite this

BibTex (up to 50 authors) Copy

@article{2017_Li,

author = {Qiang Li and Kai Shen and Ruilong Yang and Yongming Zhao and Shulong Lu and Rongxin Wang and Jianrong Dong and Deliang Wang},

title = {Comparative study of GaAs and CdTe solar cell performance under low-intensity light irradiance},

journal = {Solar Energy},

year = {2017},

volume = {157},

publisher = {Elsevier},

month = {nov},

url = {https://doi.org/10.1016/j.solener.2017.08.023},

pages = {216--226},

doi = {10.1016/j.solener.2017.08.023}

}

Publisher

Elsevier

Journal

Solar Energy

scimago Q1

wos Q2

SJR

1.314

CiteScore

12.6

Impact factor

6.6

ISSN

0038092X (Print)

14711257