The structural and optoelectronic properties of Cu1-xTixO (0≤x≤0.05) diodes prepared via a co-sputtering technique

A new series of co-sputtered Cu 1-x Ti x O films and diodes have been scrutinized. The Cu 1-x Ti x O films are grown onto quartz and Si substrates via a co-sputtering approach. The X-ray analysis revealed that the as-sputtered Cu 1-x Ti x O films show ( 1 ¯ 11) preferential orientation. The grain size depends on the amount of Ti-ions doped into the CuO films. The surface morphology showed that the Ti-ions govern the surface roughness of the CuO films. The sputtered films showed high transmittance reaches 87% and low reflectance around 8%. The optical bandgap decreases from 1.23 ​eV to 1.03 ​eV as a result of the incorporation of Ti-ions in the Cu-sites. The ideality factor, barrier height, and the series resistance of the constructed Ag/Cu 1-x Ti x O/n-Si diodes are determined using thermionic emission and Norde models. The optoelectronic properties of Ag/Cu 0.99 Ti 0.01 O/n-Si photodiode were emphasized. This photodiode showed high photosensitivity with fast photo-response and high reproducibility and stability. • A new series of co-sputtered Ag/Cu 1-x Ti x O/n-Si Schottky diodes have been prepared. • The inclusion of the Ti-ions in the Cu-sites increases the grain size and then decreases. • The inclusion of Ti-ions up to 1 ​mol%, decreases the optical bandgap from 1.23 ​eV to 1.03 ​eV. • The Ag/Cu 0.99 Ti 0.01 O/n-Si achieving a detection sensitivity of 1.1 ​× ​10 −5 ​A ​mW. • This photodiode exhibits a response time of 1s and recovery time of 2s with high reproducibility and photo-stability.