Barrier height tuning in Ti/4H-SiC Schottky diodes
G Bellocchi
1
,
Marilena Vivona
2
,
C. Bongiorno
2
,
P Badalà
1
,
A. Bassi
1
,
S. Rascuna´
1
,
Fabrizio Roccaforte
2
1
STMicroelectronics Stradale Primosole 50 95121 Catania Italy
|
Publication type: Journal Article
Publication date: 2021-12-01
scimago Q3
wos Q4
SJR: 0.352
CiteScore: 3.1
Impact factor: 1.4
ISSN: 00381101, 18792405
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
• Controlling of Schottky barrier in SiC diodes. • Effect of temperature on the Schottky contact quality and barrier height. • Effect of thickness of the Schottky contact in quality and height of the barrier. In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.
Found
Nothing found, try to update filter.
Found
Nothing found, try to update filter.
Top-30
Journals
|
1
2
3
|
|
|
Journal of Materials Science: Materials in Electronics
3 publications, 13.64%
|
|
|
Materials
3 publications, 13.64%
|
|
|
Journal of Electronic Materials
3 publications, 13.64%
|
|
|
IEEE Transactions on Electron Devices
3 publications, 13.64%
|
|
|
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2 publications, 9.09%
|
|
|
Materials Science in Semiconductor Processing
1 publication, 4.55%
|
|
|
Journal of Instrumentation
1 publication, 4.55%
|
|
|
ACS Applied Electronic Materials
1 publication, 4.55%
|
|
|
Applied Physics A: Materials Science and Processing
1 publication, 4.55%
|
|
|
Microelectronics Journal
1 publication, 4.55%
|
|
|
Materials Horizons
1 publication, 4.55%
|
|
|
1
2
3
|
Publishers
|
1
2
3
4
5
6
7
|
|
|
Springer Nature
7 publications, 31.82%
|
|
|
Institute of Electrical and Electronics Engineers (IEEE)
5 publications, 22.73%
|
|
|
Elsevier
4 publications, 18.18%
|
|
|
MDPI
3 publications, 13.64%
|
|
|
IOP Publishing
1 publication, 4.55%
|
|
|
American Chemical Society (ACS)
1 publication, 4.55%
|
|
|
Royal Society of Chemistry (RSC)
1 publication, 4.55%
|
|
|
1
2
3
4
5
6
7
|
- We do not take into account publications without a DOI.
- Statistics recalculated weekly.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
22
Total citations:
22
Citations from 2024:
8
(36.36%)
The most citing journal
Citations in journal:
3
Cite this
GOST |
RIS |
BibTex
Cite this
GOST
Copy
Bellocchi G. et al. Barrier height tuning in Ti/4H-SiC Schottky diodes // Solid-State Electronics. 2021. Vol. 186. p. 108042.
GOST all authors (up to 50)
Copy
Bellocchi G., Vivona M., Bongiorno C., Badalà P., Bassi A., Rascuna´ S., Roccaforte F. Barrier height tuning in Ti/4H-SiC Schottky diodes // Solid-State Electronics. 2021. Vol. 186. p. 108042.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1016/j.sse.2021.108042
UR - https://doi.org/10.1016/j.sse.2021.108042
TI - Barrier height tuning in Ti/4H-SiC Schottky diodes
T2 - Solid-State Electronics
AU - Bellocchi, G
AU - Vivona, Marilena
AU - Bongiorno, C.
AU - Badalà, P
AU - Bassi, A.
AU - Rascuna´, S.
AU - Roccaforte, Fabrizio
PY - 2021
DA - 2021/12/01
PB - Elsevier
SP - 108042
VL - 186
SN - 0038-1101
SN - 1879-2405
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2021_Bellocchi,
author = {G Bellocchi and Marilena Vivona and C. Bongiorno and P Badalà and A. Bassi and S. Rascuna´ and Fabrizio Roccaforte},
title = {Barrier height tuning in Ti/4H-SiC Schottky diodes},
journal = {Solid-State Electronics},
year = {2021},
volume = {186},
publisher = {Elsevier},
month = {dec},
url = {https://doi.org/10.1016/j.sse.2021.108042},
pages = {108042},
doi = {10.1016/j.sse.2021.108042}
}