SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation
Publication type: Journal Article
Publication date: 2024-05-01
scimago Q3
wos Q4
SJR: 0.352
CiteScore: 3.1
Impact factor: 1.4
ISSN: 00381101, 18792405
Materials Chemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
The silicon-on-sapphire (SOS) pseudo-MOSFETs with high-k buried hafnium dioxide interlayer (IL) were investigated after the hydrogen induced Si and HfO2 layer transfer on c-sapphire wafers and annealing at 600-1100 °C. HRTEM, GIXRD and Raman measurements were used to reveal the hafnia phases for furnace and rapid thermal annealings (FA and RTA).
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Antonov V. et al. SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation // Solid-State Electronics. 2024. Vol. 215. p. 108821.
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Antonov V., Tikhonenko F. V., Popov V. P., Miakonkikh A., Rudenko K. V., Sverdlov V. SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation // Solid-State Electronics. 2024. Vol. 215. p. 108821.
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TY - JOUR
DO - 10.1016/j.sse.2023.108821
UR - https://linkinghub.elsevier.com/retrieve/pii/S0038110123002344
TI - SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation
T2 - Solid-State Electronics
AU - Antonov, V.A.
AU - Tikhonenko, F V
AU - Popov, V P
AU - Miakonkikh, Andrey
AU - Rudenko, Konstantin V.
AU - Sverdlov, Viktor
PY - 2024
DA - 2024/05/01
PB - Elsevier
SP - 108821
VL - 215
SN - 0038-1101
SN - 1879-2405
ER -
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@article{2024_Antonov,
author = {V.A. Antonov and F V Tikhonenko and V P Popov and Andrey Miakonkikh and Konstantin V. Rudenko and Viktor Sverdlov},
title = {SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation},
journal = {Solid-State Electronics},
year = {2024},
volume = {215},
publisher = {Elsevier},
month = {may},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0038110123002344},
pages = {108821},
doi = {10.1016/j.sse.2023.108821}
}