Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide
Publication type: Journal Article
Publication date: 2025-02-01
scimago Q3
wos Q4
SJR: 0.352
CiteScore: 3.1
Impact factor: 1.4
ISSN: 00381101, 18792405
Abstract
A ferroelectric buried oxide is demonstrated to considerably enhance the tunability of the threshold voltage in FD-SOI transistors. The polarization mechanism makes the rate of change of threshold voltage with back-gate voltage increase tremendously from 4–5 % to more than 50 %. Our model and simulations show that with 1 V applied on the ground-plane, the threshold voltage is shifted by half a volt, which dramatically improves power consumption and speed.
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Cristoloveanu S. et al. Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide // Solid-State Electronics. 2025. Vol. 224. p. 109052.
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Nowak E., Barbot J., Grenouillet L. Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide // Solid-State Electronics. 2025. Vol. 224. p. 109052.
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TY - JOUR
DO - 10.1016/j.sse.2024.109052
UR - https://linkinghub.elsevier.com/retrieve/pii/S0038110124002016
TI - Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide
T2 - Solid-State Electronics
AU - Nowak, Etienne
AU - Barbot, Justine
AU - Grenouillet, Laurent
PY - 2025
DA - 2025/02/01
PB - Elsevier
SP - 109052
VL - 224
SN - 0038-1101
SN - 1879-2405
ER -
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@article{2025_Cristoloveanu,
author = {Etienne Nowak and Justine Barbot and Laurent Grenouillet},
title = {Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide},
journal = {Solid-State Electronics},
year = {2025},
volume = {224},
publisher = {Elsevier},
month = {feb},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0038110124002016},
pages = {109052},
doi = {10.1016/j.sse.2024.109052}
}