Elsevier
Journal of Crystal Growth
,  том 66 ,  издание 3 ,  страницы 562-574

Growth kinetics in LPE of the Ga-In-P-As system

Тип публикации: Journal Article
Дата публикации: 1984-05-01
Elsevier
scimago Q2
wos Q2
БС2
SJR: 0.424
CiteScore: 3.6
Impact factor: 2.0
ISSN: 00220248, 18735002
Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics
Краткое описание
Abstract A theoretical analysis of the growth kinetics for quaternary Ga x In 1− x P y As 1− y grown in an InP substrate is carried out in terms of the diffusion-limited growth model. The influence of growth temperature, composition of the initial liquid phase and supercooling of the system on the composition and growth rate of the epilayers is studied. The calculated data are compared with experimental data on the solid solution grown by the step-cooling technique.
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ГОСТ |
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ГОСТ Скопировать
Kuznetsov V. V. et al. Growth kinetics in LPE of the Ga-In-P-As system // Journal of Crystal Growth. 1984. Vol. 66. No. 3. pp. 562-574.
ГОСТ со всеми авторами (до 50) Скопировать
Kuznetsov V. V., Moskvin P., Sorokin V. S. Growth kinetics in LPE of the Ga-In-P-As system // Journal of Crystal Growth. 1984. Vol. 66. No. 3. pp. 562-574.
RIS |
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TY - JOUR
DO - 10.1016/0022-0248(84)90155-6
UR - https://linkinghub.elsevier.com/retrieve/pii/0022024884901556
TI - Growth kinetics in LPE of the Ga-In-P-As system
T2 - Journal of Crystal Growth
AU - Kuznetsov, V. V.
AU - Moskvin, Pavel
AU - Sorokin, V. S.
PY - 1984
DA - 1984/05/01
PB - Elsevier
SP - 562-574
IS - 3
VL - 66
SN - 0022-0248
SN - 1873-5002
ER -
BibTex |
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@article{1984_Kuznetsov,
author = {V. V. Kuznetsov and Pavel Moskvin and V. S. Sorokin},
title = {Growth kinetics in LPE of the Ga-In-P-As system},
journal = {Journal of Crystal Growth},
year = {1984},
volume = {66},
publisher = {Elsevier},
month = {may},
url = {https://linkinghub.elsevier.com/retrieve/pii/0022024884901556},
number = {3},
pages = {562--574},
doi = {10.1016/0022-0248(84)90155-6}
}
MLA
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MLA Скопировать
Kuznetsov, V. V., et al. “Growth kinetics in LPE of the Ga-In-P-As system.” Journal of Crystal Growth, vol. 66, no. 3, May. 1984, pp. 562-574. https://linkinghub.elsevier.com/retrieve/pii/0022024884901556.