том 22 издание 9 страницы 1195-1201

Chemically vapor deposited Ti3SiC2

Тип публикацииJournal Article
Дата публикации1987-09-01
SCImago Q1
WOS Q2
БС1
SJR0.867
CiteScore9.9
Impact factor5.7
ISSN00255408, 18734227
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Mechanics of Materials
Краткое описание
Monolithic Ti3SiC2 poly-crystalline plates 40 mm by 12 mm by 0.4 mm in size were prepared by chemical vapor deposition (CVD) using SiCl4, TiCl4, CCl4 and H2 as source gases at a deposition rate of 200 μm/h. The lattice parameters of the CVD-Ti3SiC2 were a = 3.064 A and c = 17.650 A. The density was 4.53 g/cm3 which was in agreement with the calculated value. The (110) plane was preferably oriented parallel to the deposition surface. The Vickers microhardness decreased from 1300 to 600 kg/mm2 while increasing the indenter load in the range of 10 to 100 g. In the case of 100 g to 1 kg load range, the Vickers microhardness had a constant value of about 600 kg/mm2, and many slip lines caused by the plastic deformation were observed.
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ГОСТ |
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Goto T., Hirai T. Chemically vapor deposited Ti3SiC2 // Materials Research Bulletin. 1987. Vol. 22. No. 9. pp. 1195-1201.
ГОСТ со всеми авторами (до 50) Скопировать
Goto T., Hirai T. Chemically vapor deposited Ti3SiC2 // Materials Research Bulletin. 1987. Vol. 22. No. 9. pp. 1195-1201.
RIS |
Цитировать
TY - JOUR
DO - 10.1016/0025-5408(87)90128-0
UR - https://doi.org/10.1016/0025-5408(87)90128-0
TI - Chemically vapor deposited Ti3SiC2
T2 - Materials Research Bulletin
AU - Goto, T.
AU - Hirai, T.
PY - 1987
DA - 1987/09/01
PB - Elsevier
SP - 1195-1201
IS - 9
VL - 22
SN - 0025-5408
SN - 1873-4227
ER -
BibTex |
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BibTex (до 50 авторов) Скопировать
@article{1987_Goto,
author = {T. Goto and T. Hirai},
title = {Chemically vapor deposited Ti3SiC2},
journal = {Materials Research Bulletin},
year = {1987},
volume = {22},
publisher = {Elsevier},
month = {sep},
url = {https://doi.org/10.1016/0025-5408(87)90128-0},
number = {9},
pages = {1195--1201},
doi = {10.1016/0025-5408(87)90128-0}
}
MLA
Цитировать
Goto, T., and T. Hirai. “Chemically vapor deposited Ti3SiC2.” Materials Research Bulletin, vol. 22, no. 9, Sep. 1987, pp. 1195-1201. https://doi.org/10.1016/0025-5408(87)90128-0.
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