Growth of thin films by solution-gas interface: A new technique
Publication type: Journal Article
Publication date: 1984-11-01
scimago Q1
wos Q2
SJR: 0.808
CiteScore: 8.5
Impact factor: 4.7
ISSN: 02540584, 18793312
Condensed Matter Physics
General Materials Science
Abstract
The solution-gas interface technique used for the formation of uniform and large area thin films of chalcogenides is described in this paper. The growth mechanism and kinetics of the film formation are discussed on the basis of the Surface tension of the solution. The optical and electrical properties are studied and the influence of the preparative parameters on the growth of thin films is discussed.
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Pawar S. H., Bhosale P. N. Growth of thin films by solution-gas interface: A new technique // Materials Chemistry and Physics. 1984. Vol. 11. No. 5. pp. 461-479.
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Pawar S. H., Bhosale P. N. Growth of thin films by solution-gas interface: A new technique // Materials Chemistry and Physics. 1984. Vol. 11. No. 5. pp. 461-479.
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RIS
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TY - JOUR
DO - 10.1016/0254-0584(84)90069-5
UR - https://doi.org/10.1016/0254-0584(84)90069-5
TI - Growth of thin films by solution-gas interface: A new technique
T2 - Materials Chemistry and Physics
AU - Pawar, S. H.
AU - Bhosale, Popatrao N.
PY - 1984
DA - 1984/11/01
PB - Elsevier
SP - 461-479
IS - 5
VL - 11
SN - 0254-0584
SN - 1879-3312
ER -
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BibTex (up to 50 authors)
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@article{1984_Pawar,
author = {S. H. Pawar and Popatrao N. Bhosale},
title = {Growth of thin films by solution-gas interface: A new technique},
journal = {Materials Chemistry and Physics},
year = {1984},
volume = {11},
publisher = {Elsevier},
month = {nov},
url = {https://doi.org/10.1016/0254-0584(84)90069-5},
number = {5},
pages = {461--479},
doi = {10.1016/0254-0584(84)90069-5}
}
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MLA
Copy
Pawar, S. H., and Popatrao N. Bhosale. “Growth of thin films by solution-gas interface: A new technique.” Materials Chemistry and Physics, vol. 11, no. 5, Nov. 1984, pp. 461-479. https://doi.org/10.1016/0254-0584(84)90069-5.