Applied Catalysis B: Environmental, volume 214, pages 46-56

Switching of semiconducting behavior from n -type to p -type induced high photocatalytic NO removal activity in g-C 3 N 4

Jianmin Luo 1
Guohui Dong 2, 3
Yunqing Zhu 4
Zhong Yang 5
2
 
Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011, China
5
 
Xinjiang Uygur Autonomous Region Academy of Instrument Analysis, Urumqi 830011,China
6
 
Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011, China.
Publication typeJournal Article
Publication date2017-10-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor22.1
ISSN09263373, 18733883
Catalysis
Process Chemistry and Technology
General Environmental Science
Abstract
The utilization of photocatalytic technology to remove air pollutants has attracted global interest. However, it still suffers from low removal activities under visible light irradiation. In this study, we demonstrated that the switching of the semiconducting behavior from n-type to p-type can efficiently improve the photocatalytic activity of g-C3N4 for nitric oxide (NO) removal about 3.5 times. This is due to that such switching could change the majority of carriers in g-C3N4 from electrons to holes. Interestingly, the photocatalytic removal of NO in both n-type and p-type g-C3N4 is proceeded via hole oxidation. More importantly, p-type g-C3N4 displays strong stability in both photocatalytic performance and crystal structures. This study provides a new strategy to improve the photocatalytic activity of semiconductors for air pollution removal.

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Luo J. et al. Switching of semiconducting behavior from n -type to p -type induced high photocatalytic NO removal activity in g-C 3 N 4 // Applied Catalysis B: Environmental. 2017. Vol. 214. pp. 46-56.
GOST all authors (up to 50) Copy
Luo J., Dong G., Zhu Y., Yang Z., Wang C. Switching of semiconducting behavior from n -type to p -type induced high photocatalytic NO removal activity in g-C 3 N 4 // Applied Catalysis B: Environmental. 2017. Vol. 214. pp. 46-56.
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RIS Copy
TY - JOUR
DO - 10.1016/j.apcatb.2017.05.016
UR - https://doi.org/10.1016/j.apcatb.2017.05.016
TI - Switching of semiconducting behavior from n -type to p -type induced high photocatalytic NO removal activity in g-C 3 N 4
T2 - Applied Catalysis B: Environmental
AU - Luo, Jianmin
AU - Dong, Guohui
AU - Zhu, Yunqing
AU - Yang, Zhong
AU - Wang, Chuanyi
PY - 2017
DA - 2017/10/01 00:00:00
PB - Elsevier
SP - 46-56
VL - 214
SN - 0926-3373
SN - 1873-3883
ER -
BibTex
Cite this
BibTex Copy
@article{2017_Luo,
author = {Jianmin Luo and Guohui Dong and Yunqing Zhu and Zhong Yang and Chuanyi Wang},
title = {Switching of semiconducting behavior from n -type to p -type induced high photocatalytic NO removal activity in g-C 3 N 4},
journal = {Applied Catalysis B: Environmental},
year = {2017},
volume = {214},
publisher = {Elsevier},
month = {oct},
url = {https://doi.org/10.1016/j.apcatb.2017.05.016},
pages = {46--56},
doi = {10.1016/j.apcatb.2017.05.016}
}
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