Journal of Alloys and Compounds, volume 851, pages 156820

Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection

Jiangping Jing 1
Zhuoyuan Chen 2
Chang Feng 2
Mengmeng Sun 1
Jian Hou 3
1
 
Key Laboratory of Marine Environmental Corrosion and Bio-fouling, Institute of Oceanology, Chinese Academy of Sciences, 7 Nanhai Road, Qingdao 266071, China
2
 
Key Laboratory of Marine Environmental Corrosion and Bio-fouling, Institute of Oceanology, Chinese Academy of Sciences, 7 Nanhai Road, Qingdao, 266071, China
3
 
State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute (LSMRI), Wenhai Road, Qingdao, 266237, China
Publication typeJournal Article
Publication date2021-01-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.2
ISSN09258388
Materials Chemistry
Metals and Alloys
Mechanical Engineering
Mechanics of Materials
Abstract
Photoelectrochemical cathodic protection is emerging as a green and environmental method to protect metals against corrosion. Graphitic carbon nitride (g-C 3 N 4 ) shows great application potential in this area because of its high efficiency, high stability and low cost. However, the pristine g-C 3 N 4 shows amphoteric properties, resulting in its failure in providing photoelectrochemical cathodic protection for the coupled metal in NaCl solution. In this work, a K&I co-doping technique was performed to modulate the band structure of g-C 3 N 4 , and an n-type g-C 3 N 4 (n-C 3 N 4 ) was obtained. The changes in the molecular structure were studied by SEM, HRTEM, XRD, EDS, XPS and FT-IR technologies. The n-type semiconductor characteristics were verified by the photoinduced i-V curves, SKP potential distributions and pH drift techniques. The n-C 3 N 4 can generate positive photocurrent in the whole investigated potential range, making it able to provide photoelectrochemical cathodic protection for the coupled 316L stainless steel in NaCl solution. This work is very helpful for promoting the application of g-C 3 N 4 in the fields of the photoelectric conversion and the photoelectrochemical cathodic protection. • An n-type g-C 3 N 4 was prepared to modulate its amphoteric property. • n-C 3 N 4 shows increased Fermi level and generates positive photocurrents. • n-C 3 N 4 can provide PECCP for 316L SS in NaCl solution. • Photocurrent is the criterion for predicting the PECCP performance.

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Jing J. et al. Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection // Journal of Alloys and Compounds. 2021. Vol. 851. p. 156820.
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Jing J., Chen Z., Feng C., Sun M., Hou J. Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection // Journal of Alloys and Compounds. 2021. Vol. 851. p. 156820.
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RIS Copy
TY - JOUR
DO - 10.1016/j.jallcom.2020.156820
UR - https://doi.org/10.1016/j.jallcom.2020.156820
TI - Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection
T2 - Journal of Alloys and Compounds
AU - Jing, Jiangping
AU - Chen, Zhuoyuan
AU - Feng, Chang
AU - Sun, Mengmeng
AU - Hou, Jian
PY - 2021
DA - 2021/01/01 00:00:00
PB - Elsevier
SP - 156820
VL - 851
SN - 0925-8388
ER -
BibTex
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BibTex Copy
@article{2021_Jing,
author = {Jiangping Jing and Zhuoyuan Chen and Chang Feng and Mengmeng Sun and Jian Hou},
title = {Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection},
journal = {Journal of Alloys and Compounds},
year = {2021},
volume = {851},
publisher = {Elsevier},
month = {jan},
url = {https://doi.org/10.1016/j.jallcom.2020.156820},
pages = {156820},
doi = {10.1016/j.jallcom.2020.156820}
}
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