Materials Science and Engineering B: Solid-State Materials for Advanced Technology, volume 80, issue 1-3, pages 112-115
MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
P. Möck
1
,
G. R. Booker
2
,
Nigel Mason
3
,
R. Nicholas
3
,
E. Aphandéry
3
,
T. Topuria
1
,
Nigel D. Browning
1
Publication type: Journal Article
Publication date: 2001-03-01
Q2
Q2
SJR: 0.647
CiteScore: 5.6
Impact factor: 3.9
ISSN: 09215107, 18734944
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) were used for the assessment of the QDs. Reductions in the III :V ratios and growth rates resulted in a change of the morphology of the InSb islands from hillocks without facets, and a low level of order to dumbbell shaped islands with distinct facets and a higher level of order. © 2001 Published by Elsevier Science B.V.
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Möck P. et al. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL // Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001. Vol. 80. No. 1-3. pp. 112-115.
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Möck P., Booker G. R., Mason N., Nicholas R., Aphandéry E., Topuria T., Browning N. D. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL // Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001. Vol. 80. No. 1-3. pp. 112-115.
Cite this
RIS
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TY - JOUR
DO - 10.1016/S0921-5107(00)00625-5
UR - https://doi.org/10.1016/S0921-5107(00)00625-5
TI - MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
T2 - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
AU - Möck, P.
AU - Booker, G. R.
AU - Mason, Nigel
AU - Nicholas, R.
AU - Aphandéry, E.
AU - Topuria, T.
AU - Browning, Nigel D.
PY - 2001
DA - 2001/03/01
PB - Elsevier
SP - 112-115
IS - 1-3
VL - 80
SN - 0921-5107
SN - 1873-4944
ER -
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BibTex (up to 50 authors)
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@article{2001_Möck,
author = {P. Möck and G. R. Booker and Nigel Mason and R. Nicholas and E. Aphandéry and T. Topuria and Nigel D. Browning},
title = {MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL},
journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},
year = {2001},
volume = {80},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016/S0921-5107(00)00625-5},
number = {1-3},
pages = {112--115},
doi = {10.1016/S0921-5107(00)00625-5}
}
Cite this
MLA
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Möck, P., et al. “MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL.” Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 80, no. 1-3, Mar. 2001, pp. 112-115. https://doi.org/10.1016/S0921-5107(00)00625-5.