volume 332 pages 533-541

Oxygen incorporation into GST phase-change memory matrix

R. Golovchak 1
Yong Gyu Choi 2
Yu Chigirinsky 4
A. Kovalskiy 1
P. Xiong-Skiba 1
J Trimble 1
R. Pafchek 5
H. Jain 5
Publication typeJournal Article
Publication date2015-03-01
scimago Q1
wos Q1
SJR1.310
CiteScore13.4
Impact factor6.9
ISSN01694332, 18735584
Surfaces, Coatings and Films
General Chemistry
General Physics and Astronomy
Condensed Matter Physics
Surfaces and Interfaces
Abstract
Structural changes in amorphous and crystallized GST-225 films induced by the reaction with oxygen are studied at different depth scales. The mechanism of interaction of the very top surface layers with oxygen is studied with low-energy ion scattering (LEIS) technique, while the modifications of chemistry in the underlying surface layers are investigated with high-resolution X-ray photoelectron spectroscopy (XPS). The changes averaged through the overall film thickness are characterized by micro-Raman spectroscopy. The oxygen exposure leads to a depletion of GST-225 film surfaces in Te and formation of the antimony and germanium oxides. The antimony oxide complexes are found throughout the whole thickness of the films after their prolonged storage in air, whereas no evidence for formation of pure GeO2 phase is found in the volume of the films through Raman spectroscopy. A tendency to form Ge-rich phase within the ∼10 nm surface layer is additionally observed by LEIS profiling during crystallization of GST-225 film at 300 °C in oxygen atmosphere.
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GOST Copy
Golovchak R. et al. Oxygen incorporation into GST phase-change memory matrix // Applied Surface Science. 2015. Vol. 332. pp. 533-541.
GOST all authors (up to 50) Copy
Golovchak R., Gyu Choi Y., Kozyukhin S. A., Chigirinsky Yu., Kovalskiy A., Xiong-Skiba P., Trimble J., Pafchek R., Jain H. Oxygen incorporation into GST phase-change memory matrix // Applied Surface Science. 2015. Vol. 332. pp. 533-541.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1016/j.apsusc.2015.01.203
UR - https://doi.org/10.1016/j.apsusc.2015.01.203
TI - Oxygen incorporation into GST phase-change memory matrix
T2 - Applied Surface Science
AU - Golovchak, R.
AU - Gyu Choi, Yong
AU - Kozyukhin, Sergey A.
AU - Chigirinsky, Yu
AU - Kovalskiy, A.
AU - Xiong-Skiba, P.
AU - Trimble, J
AU - Pafchek, R.
AU - Jain, H.
PY - 2015
DA - 2015/03/01
PB - Elsevier
SP - 533-541
VL - 332
SN - 0169-4332
SN - 1873-5584
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2015_Golovchak,
author = {R. Golovchak and Yong Gyu Choi and Sergey A. Kozyukhin and Yu Chigirinsky and A. Kovalskiy and P. Xiong-Skiba and J Trimble and R. Pafchek and H. Jain},
title = {Oxygen incorporation into GST phase-change memory matrix},
journal = {Applied Surface Science},
year = {2015},
volume = {332},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016/j.apsusc.2015.01.203},
pages = {533--541},
doi = {10.1016/j.apsusc.2015.01.203}
}