Applied Surface Science, volume 456, pages 801-807

C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces

Publication typeJournal Article
Publication date2018-10-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.7
ISSN01694332
Surfaces, Coatings and Films
General Chemistry
General Physics and Astronomy
Condensed Matter Physics
Surfaces and Interfaces
Abstract
The Si(1 1 1)5  ×  2-Au surface comprises a quasi-one-dimensional surface reconstruction consisting of Au stripes mediated by honeycomb Si chains. In the present study, using STM observations we explored adsorption of thallium (Tl) onto Si(1 1 1)5  ×  2-Au surface as well as growth of C60 layers on Tl-modified and intact Si(1 1 1)5  ×  2-Au surfaces. Analysis of the results was based on the recently proposed KK model of Si(1 1 1)5  ×  2-Au surface [Kwon and Kang, PRL 113 (2014) 086101]. It was found that intact Si(1 1 1)5  ×  2-Au surface produces a poor template effect on the overgrown C60 layers which have a close-packed-like structure without distinct ordering. In contrast, the C60 layers grown on the Tl-adsorbed Si(1 1 1)5  ×  2-Au surface where Tl atoms occupy various adsorption sites on the honeycomb Si chains have a well-ordered quasi-one-dimensional structure consisting of straight C60 chains. Ordering of the C60 molecules is a result of an intricate interplay between adsorbed C60 molecules with each other and with a substrate surface. Separation between neighboring C60 chains is dictated by the periodicity of the underlying Si(1 1 1)5  ×  2-Au template, while the C60-C60 spacing within the chains of ∼ 12 A that is ∼ 3.2 a 0 reflects the peculiarity of the C60-C60 intermolecular interaction on the Tl-adsorbed Si(1 1 1)5  ×  2-Au surface. Structural information on (Au, Tl)/Si(1 1 1) and C60/(Au, Tl)/Si(1 1 1) systems gained in the present study can be useful for the prospective works on elucidating the ways to control electronic properties of the Si(1 1 1)5  ×  2-Au surface using atomic and molecular adsorbates.

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Olyanich D. A. et al. C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces // Applied Surface Science. 2018. Vol. 456. pp. 801-807.
GOST all authors (up to 50) Copy
Olyanich D. A., Mararov V. V., Utas T. V., Aladyshkin A. Y., Mihalyuk A. N., ZOTOV A., Saranin A. C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces // Applied Surface Science. 2018. Vol. 456. pp. 801-807.
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RIS Copy
TY - JOUR
DO - 10.1016/j.apsusc.2018.06.202
UR - https://doi.org/10.1016%2Fj.apsusc.2018.06.202
TI - C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces
T2 - Applied Surface Science
AU - Olyanich, Dmitry A.
AU - Mararov, Vsevolod V.
AU - Utas, Tatiana V.
AU - Aladyshkin, A. Yu.
AU - Mihalyuk, A. N.
AU - ZOTOV, A.V.
AU - Saranin, A.A.
PY - 2018
DA - 2018/10/01 00:00:00
PB - Elsevier
SP - 801-807
VL - 456
SN - 0169-4332
ER -
BibTex
Cite this
BibTex Copy
@article{2018_Olyanich,
author = {Dmitry A. Olyanich and Vsevolod V. Mararov and Tatiana V. Utas and A. Yu. Aladyshkin and A. N. Mihalyuk and A.V. ZOTOV and A.A. Saranin},
title = {C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces},
journal = {Applied Surface Science},
year = {2018},
volume = {456},
publisher = {Elsevier},
month = {oct},
url = {https://doi.org/10.1016%2Fj.apsusc.2018.06.202},
pages = {801--807},
doi = {10.1016/j.apsusc.2018.06.202}
}
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