Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
Тип публикации: Journal Article
Дата публикации: 2019-11-01
scimago Q1
wos Q1
БС1
SJR: 1.31
CiteScore: 13.4
Impact factor: 6.9
ISSN: 01694332, 18735584
Surfaces, Coatings and Films
General Chemistry
General Physics and Astronomy
Condensed Matter Physics
Surfaces and Interfaces
Краткое описание
The influence of the processing conditions on the interfacial and electrical properties of the high-k/SiGe gate stacks based on ozone oxidation is investigated. Detailed analyses of the relationship between the interface chemical structures and the corresponding electrical properties, as a function of oxidation time, reveal that the change in the distribution of the Ge atoms is the dominant factor to achieve superior electrical properties. In addition, the increase in the ratio of Si 4+ to Si 3+ of the oxide interlayer can help decrease the interface trap densities. These results provide us an important passivation route for the high-k/SiGe interface based on ozone oxidation, which is to explore an oxidation method that can realize an ultrathin interlayer including as much Si 4+ component as possible over a long oxidation time.
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Ma X. et al. Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation // Applied Surface Science. 2019. Vol. 493. pp. 478-484.
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Ma X., Zhou L., Xiang J., Yang H., Wang X., LI Y., Zhang J., Zhao C., Yin H., Wang W., Ye T. Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation // Applied Surface Science. 2019. Vol. 493. pp. 478-484.
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TY - JOUR
DO - 10.1016/j.apsusc.2019.07.050
UR - https://doi.org/10.1016/j.apsusc.2019.07.050
TI - Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
T2 - Applied Surface Science
AU - Ma, Xueli
AU - Zhou, Lixing
AU - Xiang, Jinjuan
AU - Yang, Hong
AU - Wang, Xiaolei
AU - LI, YONGLIANG
AU - Zhang, Jing
AU - Zhao, Chao
AU - Yin, Huaxiang
AU - Wang, Wenwu
AU - Ye, Tianchun
PY - 2019
DA - 2019/11/01
PB - Elsevier
SP - 478-484
VL - 493
SN - 0169-4332
SN - 1873-5584
ER -
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@article{2019_Ma,
author = {Xueli Ma and Lixing Zhou and Jinjuan Xiang and Hong Yang and Xiaolei Wang and YONGLIANG LI and Jing Zhang and Chao Zhao and Huaxiang Yin and Wenwu Wang and Tianchun Ye},
title = {Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation},
journal = {Applied Surface Science},
year = {2019},
volume = {493},
publisher = {Elsevier},
month = {nov},
url = {https://doi.org/10.1016/j.apsusc.2019.07.050},
pages = {478--484},
doi = {10.1016/j.apsusc.2019.07.050}
}