Applied Surface Science, volume 636, pages 157756

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Publication typeJournal Article
Publication date2023-11-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.7
ISSN01694332
Surfaces, Coatings and Films
General Chemistry
General Physics and Astronomy
Condensed Matter Physics
Surfaces and Interfaces
Abstract
To bring atomically thin transition metal dichalcogenides (TMDs) to practical application, a highly reproducible process to grow them over a large scale is indispensable. Here, we develop a carbon-free reproducible route for the scalable growth of high-quality monolayer MoS2 by selecting molybdenum dichloride dioxide (MoO2Cl2) as the Mo source and integrating the precursor with a standard low-pressure cold-wall metalorganic chemical vapor deposition (MOCVD) system. Specifically, combined with H2S as the sulfur source and using catalytic Dragontrail glass (DT-glass) as the main substrate, we investigate the effect of MoO2Cl2 flux, temperature, and deposition time on the growth, confirming MoO2Cl2 with reasonably high vapor pressure is well compatible with the MOCVD system that enables precise control of sources for uniform nucleation and growth of MoS2 over a large area. We successfully demonstrate the growth of carbon-free MoS2 monolayers on DT-glass with decent crystalline, optical, and electrical properties. Additionally, the initial attempts also manifest that the proposed strategy could be generalized for growing ultrathin MoS2 on other technologically important substrates, such as SiO2/Si and quartz, exhibiting superior optical quality and wafer-scale uniformity. This work provides a new avenue for the large-scale production of high-quality MoS2 monolayers and facilitates their use in practical applications.

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Yang X. et al. Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source // Applied Surface Science. 2023. Vol. 636. p. 157756.
GOST all authors (up to 50) Copy
Yang X., Li S., Ikeda N., Ohtake A., Sakuma Y. Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source // Applied Surface Science. 2023. Vol. 636. p. 157756.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1016/j.apsusc.2023.157756
UR - https://doi.org/10.1016/j.apsusc.2023.157756
TI - Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source
T2 - Applied Surface Science
AU - Yang, Xu
AU - Li, Shi-Sheng
AU - Ikeda, Naoki
AU - Ohtake, Akihiro
AU - Sakuma, Yoshiki
PY - 2023
DA - 2023/11/01 00:00:00
PB - Elsevier
SP - 157756
VL - 636
SN - 0169-4332
ER -
BibTex
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BibTex Copy
@article{2023_Yang,
author = {Xu Yang and Shi-Sheng Li and Naoki Ikeda and Akihiro Ohtake and Yoshiki Sakuma},
title = {Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source},
journal = {Applied Surface Science},
year = {2023},
volume = {636},
publisher = {Elsevier},
month = {nov},
url = {https://doi.org/10.1016/j.apsusc.2023.157756},
pages = {157756},
doi = {10.1016/j.apsusc.2023.157756}
}
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