Ceramics International, volume 48, issue 6, pages 8766-8772
Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions
Publication type: Journal Article
Publication date: 2022-03-01
Journal:
Ceramics International
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 5.2
ISSN: 02728842
Materials Chemistry
Surfaces, Coatings and Films
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Process Chemistry and Technology
Abstract
Aluminum nitride (AlN) is a ceramic material with excellent dielectric and thermal properties, and it is used in the microelectron and energy fields. Despite polishing, the roughness (rms >10 nm) of AlN wafers fabricated by sintering fails to meet the surface requirements (rms <0.5 nm) for direct wafer bonding. However, rough-surface wafer bonding of paired AlN and AlN can be achieved with the following procedure: (1) rough surfaces are activated by oxygen plasma to introduce strong capillary action, (2) reactions of AlN and bonding species (OH − ) are promoted by clamping during storage and annealing and (3) low-temperature annealing (<150 °C) joins the two surfaces of AlN/AlN by synthesizing Al 2 O 3 at the bonding interface. TEM and XPS results show that a transition layer exists between bonding surfaces wherein the concentration of nitrogen decreases while that of oxygen significantly increases.
Top-30
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International Journal of Solids and Structures
1 publication, 20%
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Micromachines
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International Journal of Hydrogen Energy
1 publication, 20%
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1 publication, 20%
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Russian Chemical Reviews
1 publication, 20%
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Citations by publishers
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Elsevier
3 publications, 60%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 20%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 20%
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- We do not take into account publications without a DOI.
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Nien S. et al. Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions // Ceramics International. 2022. Vol. 48. No. 6. pp. 8766-8772.
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Nien S., Ruan J., Kuo Y., Lee B.T. Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions // Ceramics International. 2022. Vol. 48. No. 6. pp. 8766-8772.
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TY - JOUR
DO - 10.1016/j.ceramint.2022.01.131
UR - https://doi.org/10.1016/j.ceramint.2022.01.131
TI - Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions
T2 - Ceramics International
AU - Nien, S
AU - Ruan, J
AU - Kuo, Y
AU - Lee, B T
PY - 2022
DA - 2022/03/01 00:00:00
PB - Elsevier
SP - 8766-8772
IS - 6
VL - 48
SN - 0272-8842
ER -
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@article{2022,
author = {S Nien and J Ruan and Y Kuo and B T Lee},
title = {Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions},
journal = {Ceramics International},
year = {2022},
volume = {48},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016/j.ceramint.2022.01.131},
number = {6},
pages = {8766--8772},
doi = {10.1016/j.ceramint.2022.01.131}
}