Chemical Physics Letters, volume 532, pages 72-76

Photoluminescence properties of Mn-doped ZnxCd1−xS nanocrystals synthesized via nucleation-doping strategy

Wei Xu ¹

Xiangdong Meng ²

Wenyu Ji ¹

Pengtao Jing ¹

Jinju Zheng ¹

Xueyan Liu ¹

Jingwen Zhao ¹

Haibo Li ²

Hide authors affiliations Show authors affiliations: 2 affiliations

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , 3888 Eastern South Lake Road, Changchun 130033, China. |

Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University Siping 136000 China. |

Publication type: Journal Article

Publication date: 2012-04-01

Elsevier

Journal: Chemical Physics Letters

Quartile SCImago

Quartile WOS

Impact factor: 2.8

ISSN: 00092614

DOI: 10.1016/j.cplett.2012.02.001

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Physical and Theoretical Chemistry

General Physics and Astronomy

Abstract

► Optical properties of Mn-doped Zn x Cd 1− x S NCs were studied. ►The NCs with PL QY up to 29% were synthesized based on MnS/ZnS/CdS structure. ► The composition was controlled by growing various thicknesses CdS layer. ► The PL band of NCs was composed by the emissions of Mn 2+ ions and defect states. Optical properties of Mn-doped Zn x Cd 1− x S nanocrystals were studied by steady-state and time-resolved photoluminescence (PL) spectroscopy. The doped nanocrystals with PL quantum yield up to 29% were synthesized by growing a thin ZnS layer on the MnS core and then growing a CdS layer with different thicknesses using nucleation-doping strategy. The absorption band edge of Zn x Cd 1− x S nanocrystals was tuned from 425 to 475 nm by growing the CdS layer with various thicknesses under different Zn/Cd molar ratios to vary the composition. The PL band of Mn-doped nanocrystals was found to originate from emissions of Mn 2+ ions and defect states.

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Citations by journals

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RSC Advances	RSC Advances, 2, 11.76% RSC Advances 2 publications, 11.76%
Applied Physics A: Materials Science and Processing	Applied Physics A: Materials Science and Processing, 1, 5.88% Applied Physics A: Materials Science and Processing 1 publication, 5.88%
Pramana - Journal of Physics	Pramana - Journal of Physics, 1, 5.88% Pramana - Journal of Physics 1 publication, 5.88%
Journal of Electronic Materials	Journal of Electronic Materials, 1, 5.88% Journal of Electronic Materials 1 publication, 5.88%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 5.88% Journal of Materials Science: Materials in Electronics 1 publication, 5.88%
Materials Science in Semiconductor Processing	Materials Science in Semiconductor Processing, 1, 5.88% Materials Science in Semiconductor Processing 1 publication, 5.88%
Nano Energy	Nano Energy, 1, 5.88% Nano Energy 1 publication, 5.88%
Applied Surface Science	Applied Surface Science, 1, 5.88% Applied Surface Science 1 publication, 5.88%
Journal of Luminescence	Journal of Luminescence, 1, 5.88% Journal of Luminescence 1 publication, 5.88%
Materials Research Bulletin	Materials Research Bulletin, 1, 5.88% Materials Research Bulletin 1 publication, 5.88%
Crystal Growth and Design	Crystal Growth and Design, 1, 5.88% Crystal Growth and Design 1 publication, 5.88%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 1, 5.88% Journal of Materials Chemistry C 1 publication, 5.88%
Dalton Transactions	Dalton Transactions, 1, 5.88% Dalton Transactions 1 publication, 5.88%
Energy and Environmental Science	Energy and Environmental Science, 1, 5.88% Energy and Environmental Science 1 publication, 5.88%
Russian Chemical Reviews	Russian Chemical Reviews, 1, 5.88% Russian Chemical Reviews 1 publication, 5.88%
Indian Journal of Physics	Indian Journal of Physics, 1, 5.88% Indian Journal of Physics 1 publication, 5.88%
	1 2

Citations by publishers

	1 2 3 4 5
Springer Nature	Springer Nature, 5, 29.41% Springer Nature 5 publications, 29.41%
Elsevier	Elsevier, 5, 29.41% Elsevier 5 publications, 29.41%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 5, 29.41% Royal Society of Chemistry (RSC) 5 publications, 29.41%
American Chemical Society (ACS)	American Chemical Society (ACS), 1, 5.88% American Chemical Society (ACS) 1 publication, 5.88%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 5.88% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 5.88%
	1 2 3 4 5

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Xu W. et al. Photoluminescence properties of Mn-doped ZnxCd1−xS nanocrystals synthesized via nucleation-doping strategy // Chemical Physics Letters. 2012. Vol. 532. pp. 72-76.

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Xu W., Meng X., Ji W., Jing P., Zheng J., Liu X., Zhao J., Li H. Photoluminescence properties of Mn-doped ZnxCd1−xS nanocrystals synthesized via nucleation-doping strategy // Chemical Physics Letters. 2012. Vol. 532. pp. 72-76.

RIS |

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TY - JOUR

DO - 10.1016/j.cplett.2012.02.001

UR - https://doi.org/10.1016/j.cplett.2012.02.001

TI - Photoluminescence properties of Mn-doped ZnxCd1−xS nanocrystals synthesized via nucleation-doping strategy

T2 - Chemical Physics Letters

AU - Xu, Wei

AU - Meng, Xiangdong

AU - Ji, Wenyu

AU - Jing, Pengtao

AU - Zheng, Jinju

AU - Liu, Xueyan

AU - Zhao, Jingwen

AU - Li, Haibo

PY - 2012

DA - 2012/04/01 00:00:00

PB - Elsevier

SP - 72-76

VL - 532

SN - 0009-2614

ER -

BibTex

Cite this

BibTex Copy

@article{2012_Xu,

author = {Wei Xu and Xiangdong Meng and Wenyu Ji and Pengtao Jing and Jinju Zheng and Xueyan Liu and Jingwen Zhao and Haibo Li},

title = {Photoluminescence properties of Mn-doped ZnxCd1−xS nanocrystals synthesized via nucleation-doping strategy},

journal = {Chemical Physics Letters},

year = {2012},

volume = {532},

publisher = {Elsevier},

month = {apr},

url = {https://doi.org/10.1016/j.cplett.2012.02.001},

pages = {72--76},

doi = {10.1016/j.cplett.2012.02.001}

}

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Publisher

Elsevier

Journal

Chemical Physics Letters

Quartile SCImago

Quartile WOS

Impact factor

2.8

ISSN

00092614 (Print)