Electrochimica Acta, volume 297, pages 488-496

Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping

Jiangping Jing 1
Zhuoyuan Chen 1
Chang Feng 2
1
 
Key Laboratory of Marine Environmental Corrosion and Bio-fouling, Institute of Oceanology, Chinese Academy of Sciences, 7 Nanhai Road, Qingdao 266071, China
2
 
State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, Wenhai Road, Qingdao, 266237, China
Publication typeJournal Article
Publication date2019-02-01
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor6.6
ISSN00134686
General Chemical Engineering
Electrochemistry
Abstract
Graphitic carbon nitride (g-C3N4) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I2. The K&I co-doping modulates the band structure of g-C3N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3N4 (K&I-C3N4) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance.

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Jing J., Chen Z., Feng C. Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping // Electrochimica Acta. 2019. Vol. 297. pp. 488-496.
GOST all authors (up to 50) Copy
Jing J., Chen Z., Feng C. Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping // Electrochimica Acta. 2019. Vol. 297. pp. 488-496.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1016/j.electacta.2018.12.015
UR - https://doi.org/10.1016/j.electacta.2018.12.015
TI - Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping
T2 - Electrochimica Acta
AU - Jing, Jiangping
AU - Chen, Zhuoyuan
AU - Feng, Chang
PY - 2019
DA - 2019/02/01 00:00:00
PB - Elsevier
SP - 488-496
VL - 297
SN - 0013-4686
ER -
BibTex
Cite this
BibTex Copy
@article{2019_Jing,
author = {Jiangping Jing and Zhuoyuan Chen and Chang Feng},
title = {Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping},
journal = {Electrochimica Acta},
year = {2019},
volume = {297},
publisher = {Elsevier},
month = {feb},
url = {https://doi.org/10.1016/j.electacta.2018.12.015},
pages = {488--496},
doi = {10.1016/j.electacta.2018.12.015}
}
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