Journal of Luminescence, volume 230, pages 117623
Temperature effects in 3.9 eV photoluminescence of hexagonal boron nitride under band-to-band and subband excitation within 7–1100 K range
Publication type: Journal Article
Publication date: 2021-02-01
Journal:
Journal of Luminescence
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 3.6
ISSN: 00222313
General Chemistry
Biochemistry
Biophysics
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
The temperature dependence of the photoluminescence (PL) intensity of 3.90 eV in microcrystalline hexagonal boron nitride is studied in the range of 7–1100 K. The results obtained have been analyzed within the band model of energy levels of donor-acceptor pairs based on impurity (O N C N ) complexes. Luminescence enhancement processes at T < 200 K and two independent channels of external thermal activation quenching are typical of the observable luminescence mechanisms under band-to-band (5.90 eV) and subband (4.28 eV) excitations of the samples. It has been shown that, at T > 220 K, when directly excited, the samples diminish the PL intensity because of the processes of thermal ionization of the donor level of the O N -center (122 meV) and the deep acceptor level of the C N -center (1420 meV) as parts of the (O N C N )-complex. In this case, the temperature enhancement region with an activation energy of 15 meV is due to the decay of a bound Wannier-Mott exciton followed by transfer of excitation to the associated donor-acceptor pair. With band-to-band excitation at T > 220 K, the temperature peculiarities of the PL under study are determined by non-radiative relaxation processes with activation energies of 57 and 252 meV, which are caused by shallow donor levels of V N - and O N -centers, respectively. • Regularities of 3.9 eV emission in h-BN within 7–1100 K range have been studied. • PL enhancement and quenching under 5.9 and 4.28 eV excitation have been analyzed. • Energy levels model of (O N C N ) donor-acceptor pairs has been clarified. • Formation of (O N C N )-bound excitons under subband excitation has been supposed.
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- We do not take into account publications without a DOI.
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Vokhmintsev A. S., Weinstein I. Temperature effects in 3.9 eV photoluminescence of hexagonal boron nitride under band-to-band and subband excitation within 7–1100 K range // Journal of Luminescence. 2021. Vol. 230. p. 117623.
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Vokhmintsev A. S., Weinstein I. Temperature effects in 3.9 eV photoluminescence of hexagonal boron nitride under band-to-band and subband excitation within 7–1100 K range // Journal of Luminescence. 2021. Vol. 230. p. 117623.
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TY - JOUR
DO - 10.1016/j.jlumin.2020.117623
UR - https://doi.org/10.1016/j.jlumin.2020.117623
TI - Temperature effects in 3.9 eV photoluminescence of hexagonal boron nitride under band-to-band and subband excitation within 7–1100 K range
T2 - Journal of Luminescence
AU - Vokhmintsev, A S
AU - Weinstein, I.A.
PY - 2021
DA - 2021/02/01 00:00:00
PB - Elsevier
SP - 117623
VL - 230
SN - 0022-2313
ER -
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@article{2021_Vokhmintsev,
author = {A S Vokhmintsev and I.A. Weinstein},
title = {Temperature effects in 3.9 eV photoluminescence of hexagonal boron nitride under band-to-band and subband excitation within 7–1100 K range},
journal = {Journal of Luminescence},
year = {2021},
volume = {230},
publisher = {Elsevier},
month = {feb},
url = {https://doi.org/10.1016/j.jlumin.2020.117623},
pages = {117623},
doi = {10.1016/j.jlumin.2020.117623}
}