Journal of Luminescence, volume 242, pages 118550
Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots
Publication type: Journal Article
Publication date: 2022-02-01
Journal:
Journal of Luminescence
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 3.6
ISSN: 00222313
General Chemistry
Biochemistry
Biophysics
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
Thermal quenching is one of the essential factors in reducing the efficiency of radiative processes in luminophores of various nature. The emission activity of low-dimensional structures is influenced also by multiplicity of parameters that are related to synthesis processes, treatment regimes, etc. In the present work, we have investigated the temperature dependence of photoluminescence caused by exciton and defect-related transitions in ensembles of biocompatible InP/ZnS core/shell nanocrystals with an average size of 2.1 and 2.3 nm. The spread in the positions of energy levels is shown to be due to size distribution of quantum dots in the ensembles under study. For a quantitative analysis of the experimental data, we have proposed a band model accounting for the Gaussian distribution of the thermally activated barriers in the photoluminescence quenching processes. The model offers the thermal escape of an electrons from the core into the shell as the main mechanism for non-radiative decay of excitons. In turn, the quenching of defect-related emission is predominantly brought about through the emptying of the hole capture centers based on dangling phosphorus bonds. We have revealed the correlation between size distributions of quantum dots and scatter of the activation energy of exciton luminescence quenching. The developed approach will give further the possibility to optimize technological regimes and methods for band engineering of indium phosphide-based type-I quantum dots.
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Citations by publishers
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1 publication, 12.5%
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Savchenko S. S. et al. Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots // Journal of Luminescence. 2022. Vol. 242. p. 118550.
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Savchenko S. S., Vokhmintsev A. S., Weinstein I. Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots // Journal of Luminescence. 2022. Vol. 242. p. 118550.
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TY - JOUR
DO - 10.1016/j.jlumin.2021.118550
UR - https://doi.org/10.1016/j.jlumin.2021.118550
TI - Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots
T2 - Journal of Luminescence
AU - Savchenko, Sergey S
AU - Vokhmintsev, A S
AU - Weinstein, I.A.
PY - 2022
DA - 2022/02/01 00:00:00
PB - Elsevier
SP - 118550
VL - 242
SN - 0022-2313
ER -
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@article{2022_Savchenko,
author = {Sergey S Savchenko and A S Vokhmintsev and I.A. Weinstein},
title = {Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots},
journal = {Journal of Luminescence},
year = {2022},
volume = {242},
publisher = {Elsevier},
month = {feb},
url = {https://doi.org/10.1016/j.jlumin.2021.118550},
pages = {118550},
doi = {10.1016/j.jlumin.2021.118550}
}
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