Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

The boron-doped diamond (BDD) powder consisting of 40–100 µm particles was synthesized at 5 GPa and 1500–1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni–Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and ~100 nm (SANS). Magnetic impurities of NiMn x originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2–300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×10 20  cm −3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.