Open Access

Materials and Design, volume 188, pages 108415

Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system

Zhi-Liang Chen ¹

Yuan Yu ¹

Lufan Jin ¹

Yifan Li ¹

Qing-Yan Li ¹

Teng-Teng Li ¹

Yating Zhang ¹

Haitao Dai ²

Jiyong Yao ¹

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Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China. |

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University Tianjin, 300072, China. |

Publication type: Journal Article

Publication date: 2020-03-01

Elsevier

Journal: Materials and Design

Quartile SCImago

Quartile WOS

Impact factor: 8.4

ISSN: 02641275, 18734197

DOI: 10.1016/j.matdes.2019.108415

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General Materials Science

Mechanical Engineering

Mechanics of Materials

Abstract

Imitation of memory and learning behaviors of nervous system by nanoscale photoelectric devices is highly desirable for building neuromorphic systems or even artificial neural networks. In this work, artificial synapses with photoelectric plasticity and memory behaviors based on a charge trapping memristive system was fabricated. Versatile synaptic functions, such as photoelectric excitatory postsynaptic current behavior, short-term memory, long-term memory, short - to long-term memory transition, and photonic learning and forgetting behaviors, were all mimicked by applied pulses of light and electricity. Moreover, the device also has the potential to be used in flexible applications. The photoelectric plasticity and memory phenomenon can be attributed to charge trapping and detrapping, since the used CdSe/ZnS quantum dots with a quantum well structure that act as trapping centers. This work provides a cost-effective method to develop artificial synapse devices, neural networks, and computers with photoelectric operations.

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Materials and Design	Materials and Design, 5, 11.63% Materials and Design 5 publications, 11.63%
Applied Physics Letters	Applied Physics Letters, 2, 4.65% Applied Physics Letters 2 publications, 4.65%
IEEE Transactions on Electron Devices	IEEE Transactions on Electron Devices, 2, 4.65% IEEE Transactions on Electron Devices 2 publications, 4.65%
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Nanotechnology	Nanotechnology, 2, 4.65% Nanotechnology 2 publications, 4.65%
Advanced Electronic Materials	Advanced Electronic Materials, 2, 4.65% Advanced Electronic Materials 2 publications, 4.65%
ACS applied materials & interfaces	ACS applied materials & interfaces, 2, 4.65% ACS applied materials & interfaces 2 publications, 4.65%
ACS Applied Electronic Materials	ACS Applied Electronic Materials, 2, 4.65% ACS Applied Electronic Materials 2 publications, 4.65%
Journal of Materials Chemistry C	Journal of Materials Chemistry C, 2, 4.65% Journal of Materials Chemistry C 2 publications, 4.65%
Journal of Physical Chemistry Letters	Journal of Physical Chemistry Letters, 1, 2.33% Journal of Physical Chemistry Letters 1 publication, 2.33%
Physical Chemistry Chemical Physics	Physical Chemistry Chemical Physics, 1, 2.33% Physical Chemistry Chemical Physics 1 publication, 2.33%
Journal of Materials Science: Materials in Electronics	Journal of Materials Science: Materials in Electronics, 1, 2.33% Journal of Materials Science: Materials in Electronics 1 publication, 2.33%
Journal of Colloid and Interface Science	Journal of Colloid and Interface Science, 1, 2.33% Journal of Colloid and Interface Science 1 publication, 2.33%
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Small	Small, 1, 2.33% Small 1 publication, 2.33%
Advanced Science	Advanced Science, 1, 2.33% Advanced Science 1 publication, 2.33%
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Materials Chemistry Frontiers	Materials Chemistry Frontiers, 1, 2.33% Materials Chemistry Frontiers 1 publication, 2.33%
Physical Review Applied	Physical Review Applied, 1, 2.33% Physical Review Applied 1 publication, 2.33%
Advanced Intelligent Systems	Advanced Intelligent Systems, 1, 2.33% Advanced Intelligent Systems 1 publication, 2.33%
ACS Sustainable Chemistry and Engineering	ACS Sustainable Chemistry and Engineering, 1, 2.33% ACS Sustainable Chemistry and Engineering 1 publication, 2.33%
Materials Today Physics	Materials Today Physics, 1, 2.33% Materials Today Physics 1 publication, 2.33%
Frontiers of Physics	Frontiers of Physics, 1, 2.33% Frontiers of Physics 1 publication, 2.33%
Nano Letters	Nano Letters, 1, 2.33% Nano Letters 1 publication, 2.33%
Nanomaterials	Nanomaterials, 1, 2.33% Nanomaterials 1 publication, 2.33%
Surfaces and Interfaces	Surfaces and Interfaces, 1, 2.33% Surfaces and Interfaces 1 publication, 2.33%
Russian Chemical Reviews	Russian Chemical Reviews, 1, 2.33% Russian Chemical Reviews 1 publication, 2.33%
	1 2 3 4 5

Citations by publishers

	2 4 6 8 10 12
Elsevier	Elsevier, 11, 25.58% Elsevier 11 publications, 25.58%
American Chemical Society (ACS)	American Chemical Society (ACS), 7, 16.28% American Chemical Society (ACS) 7 publications, 16.28%
Wiley	Wiley, 7, 16.28% Wiley 7 publications, 16.28%
Royal Society of Chemistry (RSC)	Royal Society of Chemistry (RSC), 5, 11.63% Royal Society of Chemistry (RSC) 5 publications, 11.63%
Springer Nature	Springer Nature, 3, 6.98% Springer Nature 3 publications, 6.98%
IOP Publishing	IOP Publishing, 3, 6.98% IOP Publishing 3 publications, 6.98%
American Institute of Physics (AIP)	American Institute of Physics (AIP), 2, 4.65% American Institute of Physics (AIP) 2 publications, 4.65%
IEEE	IEEE, 2, 4.65% IEEE 2 publications, 4.65%
American Physical Society (APS)	American Physical Society (APS), 1, 2.33% American Physical Society (APS) 1 publication, 2.33%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 1, 2.33% Multidisciplinary Digital Publishing Institute (MDPI) 1 publication, 2.33%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 2.33% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 2.33%
	2 4 6 8 10 12

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Chen Z. et al. Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system // Materials and Design. 2020. Vol. 188. p. 108415.

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Chen Z., Yu Y., Jin L., Li Y., Li Q., Li T., Zhang Y., Dai H., Yao J. Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system // Materials and Design. 2020. Vol. 188. p. 108415.

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RIS Copy

TY - JOUR

DO - 10.1016/j.matdes.2019.108415

UR - https://doi.org/10.1016/j.matdes.2019.108415

TI - Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system

T2 - Materials and Design

AU - Chen, Zhi-Liang

AU - Yu, Yuan

AU - Jin, Lufan

AU - Li, Yifan

AU - Li, Qing-Yan

AU - Li, Teng-Teng

AU - Zhang, Yating

AU - Dai, Haitao

AU - Yao, Jiyong

PY - 2020

DA - 2020/03/01 00:00:00

PB - Elsevier

SP - 108415

VL - 188

SN - 0264-1275

SN - 1873-4197

ER -

BibTex

Cite this

BibTex Copy

@article{2020_Chen,

author = {Zhi-Liang Chen and Yuan Yu and Lufan Jin and Yifan Li and Qing-Yan Li and Teng-Teng Li and Yating Zhang and Haitao Dai and Jiyong Yao},

title = {Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system},

journal = {Materials and Design},

year = {2020},

volume = {188},

publisher = {Elsevier},

month = {mar},

url = {https://doi.org/10.1016/j.matdes.2019.108415},

pages = {108415},

doi = {10.1016/j.matdes.2019.108415}

}

Found error?

Publisher

Elsevier

Journal

Materials and Design

Quartile SCImago

Quartile WOS

Impact factor

8.4

ISSN

02641275 (Print)
18734197 (Electronic)