Optical Materials, volume 89, pages 138-141

A PbSe nanocrystal vertical phototransistor with graphene electrode

Yongli Che ^{1, 2}

Cao Xiaolong ^{1, 2}

Jiyong Yao ³

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College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, China |

Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China |

Publication type: Journal Article

Publication date: 2019-03-01

Elsevier

Journal: Optical Materials

Quartile SCImago

Quartile WOS

Impact factor: 3.9

ISSN: 09253467

DOI: 10.1016/j.optmat.2019.01.014

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Electronic, Optical and Magnetic Materials

Organic Chemistry

Inorganic Chemistry

Physical and Theoretical Chemistry

Spectroscopy

Atomic and Molecular Physics, and Optics

Electrical and Electronic Engineering

Abstract

Recently, low-voltage phototransistors have become promising candidates for optoelectronic applications. In this study, a general strategy for the fabrication of high-performance lead selenide (PbSe) nanocrystal (NCs)-based vertical phototransistor (VPT) using graphene as electrode was presented. Within the vertical geometry, channel length was determined by measuring the thickness of NCs thin film, thus enabling the device with ultrashort channel length (213 nm) without expensive lithography. Moreover, a high current density of 863 A cm−2 was obtained at low voltage. Utilizing the unique tunable Fermi energy (FE) of graphene, the vertical carrier transport could be effectively modulated by the Schottky barrier height between the graphene and PbSe NCs active material. As a result, the device exhibited excellent photoelectric characteristics, including a responsivity of 1.1 × 104 A W−1, an external quantum efficiency of 1.7 × 106%, a detectivity of 1.3 × 1010 Jones, and a temporal response of 7 ms at an illumination irradiance of 36 mW cm−2. Through analysis of energy levels, the carrier transport was modulated by the barrier height at the graphene-PbSe NCs interface, which is attributed to the tunable FE of graphene. Fabrication of VPT with high performance and low energy consumption represents a significant step forward for high-speed opticalswitch applications and future nanoscale complementary circuits.

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Che Y. et al. A PbSe nanocrystal vertical phototransistor with graphene electrode // Optical Materials. 2019. Vol. 89. pp. 138-141.

GOST all authors (up to 50) Copy

Che Y., Xiaolong C., Yao J. A PbSe nanocrystal vertical phototransistor with graphene electrode // Optical Materials. 2019. Vol. 89. pp. 138-141.

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RIS Copy

TY - JOUR

DO - 10.1016/j.optmat.2019.01.014

UR - https://doi.org/10.1016/j.optmat.2019.01.014

TI - A PbSe nanocrystal vertical phototransistor with graphene electrode

T2 - Optical Materials

AU - Che, Yongli

AU - Xiaolong, Cao

AU - Yao, Jiyong

PY - 2019

DA - 2019/03/01 00:00:00

PB - Elsevier

SP - 138-141

VL - 89

SN - 0925-3467

ER -

BibTex

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BibTex Copy

@article{2019_Che,

author = {Yongli Che and Cao Xiaolong and Jiyong Yao},

title = {A PbSe nanocrystal vertical phototransistor with graphene electrode},

journal = {Optical Materials},

year = {2019},

volume = {89},

publisher = {Elsevier},

month = {mar},

url = {https://doi.org/10.1016/j.optmat.2019.01.014},

pages = {138--141},

doi = {10.1016/j.optmat.2019.01.014}

}

Found error?

Publisher

Elsevier

Journal

Optical Materials

Quartile SCImago

Quartile WOS

Impact factor

3.9

ISSN

09253467 (Print)