Organic Electronics, volume 48, pages 276-284

Solution processed bilayer junction of silk fibroin and semiconductor quantum dots as multilevel memristor devices

B K Murgunde ¹

Mohammad Hussain K. Rabinal ¹

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Department of Physics Karnatak University Dharwad -580003 India |

Publication type: Journal Article

Publication date: 2017-09-01

Elsevier

Journal: Organic Electronics

Quartile SCImago

Quartile WOS

Impact factor: 3.2

ISSN: 15661199

DOI: 10.1016/j.orgel.2017.06.015

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Materials Chemistry

General Chemistry

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Biomaterials

Abstract

Silkworm protein is integrated with semiconductor quantum dots (CdSe) to form bi-layer electrical memory devices. These films are individually spin coated on ITO surface to form ITO-silk fibroin:CdSe-metal junctions. These materials are characterized by DSC, TGA, FTIR, UV–visible absorbance, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) and TEM to understand their physical properties. The charge transport is carried out on the above devices by cyclic voltage scan in the sequence zero-positive-zero-negative-zero to study their electrical memory switching behavior. Devices exhibit multilevel electrical switching both in the forward and in the reverse regions that are quite symmetric, the ON/OFF ratios are well resolved. These junctions posses a high repeatability with a good endurance and hence can be important interfaces for electrical information storage applications. The observed results of the above memristors are explained in terms of their energy band diagram, it is observed that in these interfaces monopolar charge transport of holes is the dominant mechanism that is further supported by multiple hole trapping centers both in CdSe and silk fibroin energy gaps.

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ACS Applied Electronic Materials	ACS Applied Electronic Materials, 1, 2.78% ACS Applied Electronic Materials 1 publication, 2.78%
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Elsevier	Elsevier, 7, 19.44% Elsevier 7 publications, 19.44%
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American Chemical Society (ACS)	American Chemical Society (ACS), 4, 11.11% American Chemical Society (ACS) 4 publications, 11.11%
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SAGE	SAGE, 1, 2.78% SAGE 1 publication, 2.78%
Taylor & Francis	Taylor & Francis, 1, 2.78% Taylor & Francis 1 publication, 2.78%
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Chinese Physical Society	Chinese Physical Society, 1, 2.78% Chinese Physical Society 1 publication, 2.78%
Springer Nature	Springer Nature, 1, 2.78% Springer Nature 1 publication, 2.78%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii	Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii, 1, 2.78% Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii 1 publication, 2.78%
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Murgunde B. K., Hussain K. Rabinal M. Solution processed bilayer junction of silk fibroin and semiconductor quantum dots as multilevel memristor devices // Organic Electronics. 2017. Vol. 48. pp. 276-284.

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RIS Copy

TY - JOUR

DO - 10.1016/j.orgel.2017.06.015

UR - https://doi.org/10.1016/j.orgel.2017.06.015

TI - Solution processed bilayer junction of silk fibroin and semiconductor quantum dots as multilevel memristor devices

T2 - Organic Electronics

AU - Murgunde, B K

AU - Hussain K. Rabinal, Mohammad

PY - 2017

DA - 2017/09/01 00:00:00

PB - Elsevier

SP - 276-284

VL - 48

SN - 1566-1199

ER -

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@article{2017_Murgunde,

author = {B K Murgunde and Mohammad Hussain K. Rabinal},

title = {Solution processed bilayer junction of silk fibroin and semiconductor quantum dots as multilevel memristor devices},

journal = {Organic Electronics},

year = {2017},

volume = {48},

publisher = {Elsevier},

month = {sep},

url = {https://doi.org/10.1016/j.orgel.2017.06.015},

pages = {276--284},

doi = {10.1016/j.orgel.2017.06.015}

}

Found error?

Publisher

Elsevier

Journal

Organic Electronics

Quartile SCImago

Quartile WOS

Impact factor

3.2

ISSN

15661199 (Print)