Elsevier
Physica B: Condensed Matter
,  volume 719 ,  pages 417913

Electronic structure of a p -type topological insulator SnSbBiTe 4

S V Eremeev 1, 2
, 
L. Ferrari 3
, 
P M Sheverdyaeva 4
, 
O. De Luca 5, 6, 7
, 
T. Caruso 5, 6
, 
M. Casciaro 5, 6
, 
K.Z. Mehtiyeva 8
, 
Ziya S. Aliev 8, 9
, 
E. V. CHULKOV 2, 10
, 
Andrey S Vasenko 2
, 
G. Di Santo 11
, 
L. Petaccia 11
, 
M Papagno 5, 6
, 
D. Pacilè 5, 6
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
Institute of Physics, Science and Education Ministry of Azerbaijan, AZ1143 Baku, Azerbaijan | 
10
 
11
 
Publication type: Journal Article
Publication date: 2025-11-01
Elsevier
scimago Q2
wos Q2
SJR: 0.506
CiteScore: 5.0
Impact factor: 2.8
ISSN: 09214526, 18732135
Abstract
This study explores the bulk and surface electronic band structure of the SnSbBiTe4 van der Waals (vdW) compound composed of septuple layer (SL) vdW blocks in which pnictogen atoms (Sb,Bi) share the same sublattice in a 50/50 ratio. We provide a characterization of the electronic structure of SnSbBiTe4 by means of core-level photoemission spectroscopy and angle-resolved photoemission spectroscopy, complementing experimental studies with density functional theory calculations.
Found 

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
0
Share
Cite this
GOST |
Cite this
GOST Copy
Eremeev S. V. et al. Electronic structure of a p -type topological insulator SnSbBiTe 4 // Physica B: Condensed Matter. 2025. Vol. 719. p. 417913.
GOST all authors (up to 50) Copy
Eremeev S. V., Ferrari L., Sheverdyaeva P. M., De Luca O., Caruso T., Casciaro M., Mehtiyeva K., Aliev Z. S., CHULKOV E. V., Vasenko A. S., Di Santo G., Petaccia L., Papagno M., Pacilè D. Electronic structure of a p -type topological insulator SnSbBiTe 4 // Physica B: Condensed Matter. 2025. Vol. 719. p. 417913.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1016/j.physb.2025.417913
UR - https://linkinghub.elsevier.com/retrieve/pii/S0921452625010300
TI - Electronic structure of a p -type topological insulator SnSbBiTe 4
T2 - Physica B: Condensed Matter
AU - Eremeev, S V
AU - Ferrari, L.
AU - Sheverdyaeva, P M
AU - De Luca, O.
AU - Caruso, T.
AU - Casciaro, M.
AU - Mehtiyeva, K.Z.
AU - Aliev, Ziya S.
AU - CHULKOV, E. V.
AU - Vasenko, Andrey S
AU - Di Santo, G.
AU - Petaccia, L.
AU - Papagno, M
AU - Pacilè, D.
PY - 2025
DA - 2025/11/01
PB - Elsevier
SP - 417913
VL - 719
SN - 0921-4526
SN - 1873-2135
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2025_Eremeev,
author = {S V Eremeev and L. Ferrari and P M Sheverdyaeva and O. De Luca and T. Caruso and M. Casciaro and K.Z. Mehtiyeva and Ziya S. Aliev and E. V. CHULKOV and Andrey S Vasenko and G. Di Santo and L. Petaccia and M Papagno and D. Pacilè},
title = {Electronic structure of a p -type topological insulator SnSbBiTe 4},
journal = {Physica B: Condensed Matter},
year = {2025},
volume = {719},
publisher = {Elsevier},
month = {nov},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0921452625010300},
pages = {417913},
doi = {10.1016/j.physb.2025.417913}
}