Synthetic Metals

, volume 274 , pages 116732

Novel polyamides containing asymmetric diamine designed and synthesized towards electrochromic and resistance memory device

Gao Yanyu ¹

Wei Guo Zhang ¹

Dongxu Li ¹

Xiaoxue Lin ¹

Xin Qiao ¹

Haijun Niu ¹

Wen Wang ²

Hide authors affiliations Show authors affiliations: 2 affiliations

Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Department of Macromolecular Science and Engineering, School of Chemical, Chemical Engineering and Materials, Heilongjiang University, Harbin 150086, PR China. |

School of Materials Science and Engineering, Harbin Institute of Technology,Harbin 150080,PR China |

Publication type: Journal Article

Publication date: 2021-04-01

Elsevier

Synthetic Metals

scimago Q1

wos Q2

SJR: 0.787

CiteScore: 8.3

Impact factor: 4.6

ISSN: 03796779

DOI: 10.1016/j.synthmet.2021.116732

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Materials Chemistry

Metals and Alloys

Electronic, Optical and Magnetic Materials

Condensed Matter Physics

Mechanical Engineering

Mechanics of Materials

Abstract

Electrochromic (EC) materials have captured intense attentions in the field of smart window, label screen and camouflage recently. The structure of EC active group is crucial to the properties of product. In this study, novel PAs with EC and memory properties were developed by polycondensation of asymmetry triarylamine N, N'-bis(4-aminophenyl)-N-isopropyl-N'-phenylbenzene-1,4-diamine (IPATAA) with five different dicarboxylic monomers. An isopropyl group of the IPATAA molecule is linked to a nitrogen atom to increase electron density and solubility. Furthermore, PAs are apt to be processed into a film by spin-coating or printing. After electro-oxidation, PAs films change from colorless to blue. The coloring time and bleaching time is 2.8–4.1 s and 2.6–4.5 s, respectively. The highest coloring efficiency of PAs film is 366 cm2 C−1. Memory devices made using the PAs show non-volatile memory characteristics such as lower switching threshold voltages ( 2 × 104).

Found

1 citation

Ponomarenko Sergey

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DSc in Chemistry, associate member of the Russian Academy of Sciences

261 publications, 6 113 citations, 64 reviews

h-index: 41

Lomonosov Moscow State University

Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences

1 citation

Luponosov Yuriy

🥼 🤝

DSc in Chemistry

113 publications, 2 531 citations, 13 reviews

h-index: 27

Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences

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GOST Copy

Yanyu G. et al. Novel polyamides containing asymmetric diamine designed and synthesized towards electrochromic and resistance memory device // Synthetic Metals. 2021. Vol. 274. p. 116732.

GOST all authors (up to 50) Copy

Yanyu G., Zhang W. G., Li D., Lin X., Qiao X., Niu H., Wang W. Novel polyamides containing asymmetric diamine designed and synthesized towards electrochromic and resistance memory device // Synthetic Metals. 2021. Vol. 274. p. 116732.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1016/j.synthmet.2021.116732

UR - https://doi.org/10.1016/j.synthmet.2021.116732

TI - Novel polyamides containing asymmetric diamine designed and synthesized towards electrochromic and resistance memory device

T2 - Synthetic Metals

AU - Yanyu, Gao

AU - Zhang, Wei Guo

AU - Li, Dongxu

AU - Lin, Xiaoxue

AU - Qiao, Xin

AU - Niu, Haijun

AU - Wang, Wen

PY - 2021

DA - 2021/04/01

PB - Elsevier

SP - 116732

VL - 274

SN - 0379-6779

ER -

BibTex

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BibTex (up to 50 authors) Copy

@article{2021_Yanyu,

author = {Gao Yanyu and Wei Guo Zhang and Dongxu Li and Xiaoxue Lin and Xin Qiao and Haijun Niu and Wen Wang},

title = {Novel polyamides containing asymmetric diamine designed and synthesized towards electrochromic and resistance memory device},

journal = {Synthetic Metals},

year = {2021},

volume = {274},

publisher = {Elsevier},

month = {apr},

url = {https://doi.org/10.1016/j.synthmet.2021.116732},

pages = {116732},

doi = {10.1016/j.synthmet.2021.116732}

}

Publisher

Elsevier

Journal

Synthetic Metals

scimago Q1

wos Q2

SJR

0.787

CiteScore

8.3

Impact factor

4.6

ISSN

03796779 (Print)