Thin Solid Films

, том 517 , издание 4 , страницы 1449-1452

Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation

Тип публикации: Journal Article

Дата публикации: 2008-12-01

Elsevier

Thin Solid Films

scimago Q2

wos Q3

БС1

SJR: 0.419

CiteScore: 3.9

Impact factor: 2

ISSN: 00406090, 18792731

DOI: 10.1016/j.tsf.2008.09.056

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Materials Chemistry

Metals and Alloys

Surfaces, Coatings and Films

Electronic, Optical and Magnetic Materials

Surfaces and Interfaces

Краткое описание

Cu 2 ZnSnS 4 films were grown on Si (100) by vacuum evaporation using elemental Cu, Sn, S and binary ZnS as sources. X-ray diffraction patterns of films grown at different substrate temperatures indicated that polycrystalline growth was suppressed and the orientational growths were relatively induced in a film grown at higher temperatures. Tetragonal structure of Cu 2 ZnSnS 4 films was confirmed by studying RHEED patterns. The existence of c -axis ([001] direction) growth, two kinds of a -axis (〈100〉 direction) growth and four kinds of {112} twins which can be classified as two symmetrical pairs is proposed. Broad emissions at around 1.45 eV and 1.31 eV were observed in the photoluminescence spectrum measured at 13 K.

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Oishi K. et al. Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation // Thin Solid Films. 2008. Vol. 517. No. 4. pp. 1449-1452.

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Oishi K., Saito G., Ebina K., Nagahashi M., Jimbo K., Maw W. S., Katagiri H., YAMAZAKI M., Araki H., Takeuchi A. Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation // Thin Solid Films. 2008. Vol. 517. No. 4. pp. 1449-1452.

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TY - JOUR

DO - 10.1016/j.tsf.2008.09.056

UR - https://doi.org/10.1016/j.tsf.2008.09.056

TI - Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation

T2 - Thin Solid Films

AU - Oishi, Koichiro

AU - Saito, Genki

AU - Ebina, Kiyoshi

AU - Nagahashi, Masanori

AU - Jimbo, Kazuo

AU - Maw, Win Shwe

AU - Katagiri, Hironori

AU - YAMAZAKI, Makoto

AU - Araki, Hideaki

AU - Takeuchi, Akiko

PY - 2008

DA - 2008/12/01

PB - Elsevier

SP - 1449-1452

IS - 4

VL - 517

SN - 0040-6090

SN - 1879-2731

ER -

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@article{2008_Oishi,

author = {Koichiro Oishi and Genki Saito and Kiyoshi Ebina and Masanori Nagahashi and Kazuo Jimbo and Win Shwe Maw and Hironori Katagiri and Makoto YAMAZAKI and Hideaki Araki and Akiko Takeuchi},

title = {Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation},

journal = {Thin Solid Films},

year = {2008},

volume = {517},

publisher = {Elsevier},

month = {dec},

url = {https://doi.org/10.1016/j.tsf.2008.09.056},

number = {4},

pages = {1449--1452},

doi = {10.1016/j.tsf.2008.09.056}

}

MLA

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MLA Скопировать

Oishi, Koichiro, et al. “Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation.” Thin Solid Films, vol. 517, no. 4, Dec. 2008, pp. 1449-1452. https://doi.org/10.1016/j.tsf.2008.09.056.

Издатель

Elsevier

Журнал

Thin Solid Films

scimago Q2

wos Q3

БС1

SJR

0.419

CiteScore

3.9

Impact factor

ISSN

00406090 (Print, Electronic)

18792731