Elsevier
Ultramicroscopy
,  volume 179 ,  pages 33-40

Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

Publication type: Journal Article
Publication date: 2017-08-01
Elsevier
scimago Q2
wos Q3
SJR: 0.716
CiteScore: 4.1
Impact factor: 2.0
ISSN: 03043991, 18792723
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation
Abstract
We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10-3e/Hz-1/2 at room temperature.
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GOST Copy
Trifonov A. S. et al. Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor // Ultramicroscopy. 2017. Vol. 179. pp. 33-40.
GOST all authors (up to 50) Copy
Trifonov A. S., Presnov D. E., Bozhev I. V., Evplov D. A., Desmaris V., Krupenin V. Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor // Ultramicroscopy. 2017. Vol. 179. pp. 33-40.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1016/j.ultramic.2017.03.030
UR - https://doi.org/10.1016/j.ultramic.2017.03.030
TI - Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor
T2 - Ultramicroscopy
AU - Trifonov, Artem S.
AU - Presnov, Denis E.
AU - Bozhev, Ivan V
AU - Evplov, D A
AU - Desmaris, V.
AU - Krupenin, V.A.
PY - 2017
DA - 2017/08/01
PB - Elsevier
SP - 33-40
VL - 179
PMID - 28388480
SN - 0304-3991
SN - 1879-2723
ER -
BibTex
Cite this
BibTex (up to 50 authors) Copy
@article{2017_Trifonov,
author = {Artem S. Trifonov and Denis E. Presnov and Ivan V Bozhev and D A Evplov and V. Desmaris and V.A. Krupenin},
title = {Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor},
journal = {Ultramicroscopy},
year = {2017},
volume = {179},
publisher = {Elsevier},
month = {aug},
url = {https://doi.org/10.1016/j.ultramic.2017.03.030},
pages = {33--40},
doi = {10.1016/j.ultramic.2017.03.030}
}
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