C—The synthesis of CeO2+n·n H2O nanolayers on silicon and fused-quartz surfaces by the successive ionic layer deposition technique

For the first time, the conditions of the synthesis of CeO 2+ n · n H 2 O nanolayer synthesis, such as the concentration and pH of the reactant solutions, the duration of treatment with them, and the number of ion-deposition cycles on kinetics of the layer growth on a silicon surface, were investigated. The deposited layers were studied through the methods of ellipsometry, UV-Vis and FTIR spectroscopy. When cerium acetate and hydrogen peroxide in a weak alkaline medium were used as the reactants, the surface film undergoes regular linear growth and its thickness can be controlled at the level of less than a nanometer. The prepared layers were investigated after heating in air at temperatures in the 100–500°C range.