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том 26 издание S2 страницы 1626-1628

Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy

Тип публикацииJournal Article
Дата публикации2020-07-30
scimago Q2
wos Q1
white level БС1
SJR0.465
CiteScore1.3
Impact factor3
ISSN14319276, 14358115
Instrumentation
Краткое описание
The new frontiers of the investigation into biosensors based on the field effect transistor (FET) opened the way for sensing single-molecular DNA [1], for single-cell analysis [2] and early cancer diagnosis [3]. Recently Zhang et al. [1] presented a FET based on poly-pyrrole (PPy). PPy-FET is manufactured on the tip of a spear-shaped dual carbon nanoelectrode derived from carbon deposition inside double-barrel nanopipettes. This structure can measure the pH gradient in three-dimensional space, detect adenosine triphosphate and identify biochemical properties of a single living cell. However, PPy is not stable and degrades after few measurement cycles. The challenge is to create the FET structure based on inorganic semiconductor materials on a nanometric tip which is biocompatible, does not degrade over time and is capable of detecting the gradient of a few mV potential in living cells, dendrites and axons of neurons in vivo.
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Turutin A. et al. Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy // Microscopy and Microanalysis. 2020. Vol. 26. No. S2. pp. 1626-1628.
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Turutin A., Temirov A., Kubasov I., Kislyuk A., Malinkovich M., Parkhomenko Y., Erofeev A., Korchev Y. Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy // Microscopy and Microanalysis. 2020. Vol. 26. No. S2. pp. 1626-1628.
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TY - JOUR
DO - 10.1017/S1431927620018772
UR - https://doi.org/10.1017/S1431927620018772
TI - Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy
T2 - Microscopy and Microanalysis
AU - Turutin, Andrei
AU - Temirov, Aleksandr
AU - Kubasov, Ilya
AU - Kislyuk, Aleksandr
AU - Malinkovich, Mikhail
AU - Parkhomenko, Yuriy
AU - Erofeev, Alexander
AU - Korchev, Yuri
PY - 2020
DA - 2020/07/30
PB - Oxford University Press
SP - 1626-1628
IS - S2
VL - 26
SN - 1431-9276
SN - 1435-8115
ER -
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@article{2020_Turutin,
author = {Andrei Turutin and Aleksandr Temirov and Ilya Kubasov and Aleksandr Kislyuk and Mikhail Malinkovich and Yuriy Parkhomenko and Alexander Erofeev and Yuri Korchev},
title = {Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy},
journal = {Microscopy and Microanalysis},
year = {2020},
volume = {26},
publisher = {Oxford University Press},
month = {jul},
url = {https://doi.org/10.1017/S1431927620018772},
number = {S2},
pages = {1626--1628},
doi = {10.1017/S1431927620018772}
}
MLA
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Turutin, Andrei, et al. “Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy.” Microscopy and Microanalysis, vol. 26, no. S2, Jul. 2020, pp. 1626-1628. https://doi.org/10.1017/S1431927620018772.
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