Open Access
Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy
Andrei Turutin
1
,
Aleksandr Temirov
1
,
Ilya Kubasov
1
,
Mikhail Malinkovich
1
,
Yuriy Parkhomenko
1
,
Alexander Erofeev
2
,
Yuri Korchev
3
2
Publication type: Journal Article
Publication date: 2020-07-30
scimago Q2
wos Q1
SJR: 0.465
CiteScore: 1.3
Impact factor: 3.0
ISSN: 14319276, 14358115
Instrumentation
Abstract
The new frontiers of the investigation into biosensors based on the field effect transistor (FET) opened the way for sensing single-molecular DNA [1], for single-cell analysis [2] and early cancer diagnosis [3]. Recently Zhang et al. [1] presented a FET based on poly-pyrrole (PPy). PPy-FET is manufactured on the tip of a spear-shaped dual carbon nanoelectrode derived from carbon deposition inside double-barrel nanopipettes. This structure can measure the pH gradient in three-dimensional space, detect adenosine triphosphate and identify biochemical properties of a single living cell. However, PPy is not stable and degrades after few measurement cycles. The challenge is to create the FET structure based on inorganic semiconductor materials on a nanometric tip which is biocompatible, does not degrade over time and is capable of detecting the gradient of a few mV potential in living cells, dendrites and axons of neurons in vivo.
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Turutin A. et al. Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy // Microscopy and Microanalysis. 2020. Vol. 26. No. S2. pp. 1626-1628.
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Turutin A., Temirov A., Kubasov I., Kislyuk A., Malinkovich M., Parkhomenko Y., Erofeev A., Korchev Y. Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy // Microscopy and Microanalysis. 2020. Vol. 26. No. S2. pp. 1626-1628.
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TY - JOUR
DO - 10.1017/S1431927620018772
UR - https://doi.org/10.1017/S1431927620018772
TI - Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy
T2 - Microscopy and Microanalysis
AU - Turutin, Andrei
AU - Temirov, Aleksandr
AU - Kubasov, Ilya
AU - Kislyuk, Aleksandr
AU - Malinkovich, Mikhail
AU - Parkhomenko, Yuriy
AU - Erofeev, Alexander
AU - Korchev, Yuri
PY - 2020
DA - 2020/07/30
PB - Oxford University Press
SP - 1626-1628
IS - S2
VL - 26
SN - 1431-9276
SN - 1435-8115
ER -
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@article{2020_Turutin,
author = {Andrei Turutin and Aleksandr Temirov and Ilya Kubasov and Aleksandr Kislyuk and Mikhail Malinkovich and Yuriy Parkhomenko and Alexander Erofeev and Yuri Korchev},
title = {Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy},
journal = {Microscopy and Microanalysis},
year = {2020},
volume = {26},
publisher = {Oxford University Press},
month = {jul},
url = {https://doi.org/10.1017/S1431927620018772},
number = {S2},
pages = {1626--1628},
doi = {10.1017/S1431927620018772}
}
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MLA
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Turutin, Andrei, et al. “Nanosized Field-effect Transistor Based on Germanium for Next Generation Biosensors in Scanning Ion-conductance Microscopy.” Microscopy and Microanalysis, vol. 26, no. S2, Jul. 2020, pp. 1626-1628. https://doi.org/10.1017/S1431927620018772.