ACS Applied Electronic Materials

, volume 2 , issue 11 , pages 3618-3626

Influence of Oxygen Content on the Structure and Reliability of Ferroelectric Hf_xZr_1–xO₂ Layers

Monica Materano ¹

Terence Mittmann ¹

Patrick D. Lomenzo ¹

Chuan-Zhen Zhou ²

Jacob Jones ³

Max Falkowski ⁴

A. Kersch ⁴

Thomas Mikolajick ^{1, 5}

U. Schroeder ¹

Hide authors affiliations Show authors affiliations: 5 affiliations

NaMLab gGmbH, Noethnitzer Strasse 64a, 01187 Dresden, Germany |

Analytical Instrumentation Facility, North Carolina State University, 27695 Raleigh, North Carolina, United States |

Department of Materials Science and Engineering, North Carolina State University, 27695 Raleigh, North Carolina, United States |

⁴

Hochschule München, Lothstr. 34, 80335 München, Germany |

⁵

Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01062 Dresden, Germany |

Publication type: Journal Article

Publication date: 2020-10-23

American Chemical Society (ACS)

ACS Applied Electronic Materials

scimago Q1

wos Q2

SJR: 1.045

CiteScore: 7.4

Impact factor: 4.7

ISSN: 26376113

DOI: 10.1021/acsaelm.0c00680

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Materials Chemistry

Electronic, Optical and Magnetic Materials

Electrochemistry

Abstract

Although some years have passed since the discovery of the ferroelectric phase in HfO2 and ZrO2 and their solid solution system HfxZr1–xO2, the details of the emergence of this phase are still unde...

Found

2 citations

Markeev Andrey

🥼

DSc in Engineering

109 publications, 3 039 citations, 5 reviews

h-index: 29

Moscow Institute of Physics and Technology

Research interests

Atomic layer deposition

Ferroelectrics based on hafnium oxide

High-k dielectrics

Neuromorphic devices

Oxide resistive memory

Transition metal dichalcogenides

Two-dimensional materials

2 citations

Chernikova Anna

48 publications, 1 882 citations, 11 reviews

h-index: 22

Moscow Institute of Physics and Technology

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106

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GOST |

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GOST Copy

Materano M. et al. Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers // ACS Applied Electronic Materials. 2020. Vol. 2. No. 11. pp. 3618-3626.

GOST all authors (up to 50) Copy

Materano M., Mittmann T., Lomenzo P. D., Zhou C., Jones J., Falkowski M., Kersch A., Mikolajick T., Schroeder U. Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers // ACS Applied Electronic Materials. 2020. Vol. 2. No. 11. pp. 3618-3626.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1021/acsaelm.0c00680

UR - https://doi.org/10.1021/acsaelm.0c00680

TI - Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers

T2 - ACS Applied Electronic Materials

AU - Materano, Monica

AU - Mittmann, Terence

AU - Lomenzo, Patrick D.

AU - Zhou, Chuan-Zhen

AU - Jones, Jacob

AU - Falkowski, Max

AU - Kersch, A.

AU - Mikolajick, Thomas

AU - Schroeder, U.

PY - 2020

DA - 2020/10/23

PB - American Chemical Society (ACS)

SP - 3618-3626

IS - 11

VL - 2

SN - 2637-6113

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2020_Materano,

author = {Monica Materano and Terence Mittmann and Patrick D. Lomenzo and Chuan-Zhen Zhou and Jacob Jones and Max Falkowski and A. Kersch and Thomas Mikolajick and U. Schroeder},

title = {Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers},

journal = {ACS Applied Electronic Materials},

year = {2020},

volume = {2},

publisher = {American Chemical Society (ACS)},

month = {oct},

url = {https://doi.org/10.1021/acsaelm.0c00680},

number = {11},

pages = {3618--3626},

doi = {10.1021/acsaelm.0c00680}

}

MLA

Cite this

MLA Copy

Materano, Monica, et al. “Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers.” ACS Applied Electronic Materials, vol. 2, no. 11, Oct. 2020, pp. 3618-3626. https://doi.org/10.1021/acsaelm.0c00680.

Publisher

American Chemical Society (ACS)

Journal

ACS Applied Electronic Materials

scimago Q1

wos Q2

SJR

1.045

CiteScore

7.4

Impact factor

4.7

ISSN

26376113 (Print, Electronic)