Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection
Alagesan Subramanian
1
,
Sajid Hussain
1
,
Nasrud Din
1
,
Ghulam Abbas
2
,
Ahmed Shuja
3
,
Wei Lei
1
,
Jing Chen
1
,
Qasim Khan
2, 4
,
Kevin Musselman
4
Тип публикации: Journal Article
Дата публикации: 2020-12-09
scimago Q1
wos Q2
БС1
SJR: 1.045
CiteScore: 7.4
Impact factor: 4.7
ISSN: 26376113
Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrochemistry
Краткое описание
The vertical field-effect phototransistor (VFEPT) has received great attention because of its large current density and the low operation voltage required to achieve the desirable photodetector per...
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Subramanian A. et al. Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection // ACS Applied Electronic Materials. 2020. Vol. 2. No. 12. pp. 3871-3879.
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Subramanian A., Hussain S., Din N., Abbas G., Shuja A., Lei W., Chen J., Khan Q., Musselman K. Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection // ACS Applied Electronic Materials. 2020. Vol. 2. No. 12. pp. 3871-3879.
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TY - JOUR
DO - 10.1021/acsaelm.0c00707
UR - https://doi.org/10.1021/acsaelm.0c00707
TI - Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection
T2 - ACS Applied Electronic Materials
AU - Subramanian, Alagesan
AU - Hussain, Sajid
AU - Din, Nasrud
AU - Abbas, Ghulam
AU - Shuja, Ahmed
AU - Lei, Wei
AU - Chen, Jing
AU - Khan, Qasim
AU - Musselman, Kevin
PY - 2020
DA - 2020/12/09
PB - American Chemical Society (ACS)
SP - 3871-3879
IS - 12
VL - 2
SN - 2637-6113
ER -
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@article{2020_Subramanian,
author = {Alagesan Subramanian and Sajid Hussain and Nasrud Din and Ghulam Abbas and Ahmed Shuja and Wei Lei and Jing Chen and Qasim Khan and Kevin Musselman},
title = {Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection},
journal = {ACS Applied Electronic Materials},
year = {2020},
volume = {2},
publisher = {American Chemical Society (ACS)},
month = {dec},
url = {https://doi.org/10.1021/acsaelm.0c00707},
number = {12},
pages = {3871--3879},
doi = {10.1021/acsaelm.0c00707}
}
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MLA
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Subramanian, Alagesan, et al. “Solution-Processed Vertical Field-Effect Transistor with Separated Charge Generation and Charge Transport Layers for High-Performance Near-Infrared Photodetection.” ACS Applied Electronic Materials, vol. 2, no. 12, Dec. 2020, pp. 3871-3879. https://doi.org/10.1021/acsaelm.0c00707.