ACS Applied Electronic Materials, volume 6, issue 1, pages 406-414
HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability
Jinyan Pan
1
,
Hongyang He
1
,
Yaping Dan
2
,
Yuxiang Lin
1
,
Shuya Yang
3
,
Maojing Li
1
,
Tiejun Li
1
Publication type: Journal Article
Publication date: 2023-12-27
Journal:
ACS Applied Electronic Materials
scimago Q1
SJR: 1.058
CiteScore: 7.2
Impact factor: 4.3
ISSN: 26376113
Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrochemistry
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