ACS Applied Electronic Materials, volume 7, issue 1, pages 407-416

Selective Etching of SiO₂ by Radical Recombination through NF₃/H₂ Pulsed RF Plasma

Dae Whan Kim ¹

Hong Seong Gil ²

Woo Chang Park ²

Ji Yeon Lee ¹

Doo San Kim ²

Yun Jong Jang ²

Kyoung Chan Kim ²

Do Seong Pyun ¹

Ju Young Kim ³

Yongil Kim ²

Geun Young Yeom ^{2, 4}

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Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea |

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea |

Department of Photovoltaic System Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea |

⁴

SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea |

Publication type: Journal Article

Publication date: 2024-12-20

American Chemical Society (ACS)

Journal: ACS Applied Electronic Materials

scimago Q1

SJR: 1.058

CiteScore: 7.2

Impact factor: 4.3

ISSN: 26376113

DOI: 10.1021/acsaelm.4c01828

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Publisher

American Chemical Society (ACS)

Journal

ACS Applied Electronic Materials

scimago Q1

SJR

1.058

CiteScore

7.2

Impact factor

4.3

ISSN

26376113 (Print, Electronic)

Selective Etching of SiO2 by Radical Recombination through NF3/H2 Pulsed RF Plasma

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Selective Etching of SiO₂ by Radical Recombination through NF₃/H₂ Pulsed RF Plasma