ACS Applied Electronic Materials, volume 7, issue 5, pages 1953-1965
Effect of NF3, WF6, and MoF6 Additive Gases on High Aspect Ratio Contact SiO2 Etching in c-C4F8/C4F6/Ar/O2 Plasmas
Hyun Woo Tak
1, 2
,
Chan hyuk Choi
2, 3
,
Seong Bae Kim
1, 2
,
Myeong Ho Park
2, 3
,
Jun Soo Lee
2, 4
,
Akihide Sato
2, 4
,
Bong Sun Kim
1, 2
,
Jun Ki Jang
1, 2
,
Eun Koo Kim
2, 5
,
Dong Woo Kim
1, 2
,
Geun Young Yeom
1, 2, 3, 4
1
School of Advanced Materials Science and Engineering
4
Department of Display Engineering
5
Department of Semiconductor and Display Engineering
Publication type: Journal Article
Publication date: 2025-02-19
Journal:
ACS Applied Electronic Materials
scimago Q1
SJR: 1.058
CiteScore: 7.2
Impact factor: 4.3
ISSN: 26376113
Found
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