ACS applied materials & interfaces, volume 15, issue 21, pages 26128-26137

Dielectric-on-Dielectric Achieved on SiO₂ in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

James Huang ¹

Yunil Cho ²

Victor Wang ¹

Zichen Zhang ¹

Jing Mu ¹

Ajay Yadav ³

KEITH WONG ³

Srinivas Nemani ³

Ellie Yieh ³

Andrew C. Kummel ⁴

Show full list: 10 authors

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Materials Science and Engineering, University of California, San Diego, La Jolla California 92093, United States |

Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093, United States |

Applied Materials, Inc., Santa Clara, California 95054, United States |

⁴

Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla California 92093, United States |

Publication type: Journal Article

Publication date: 2023-05-19

American Chemical Society (ACS)

Journal: ACS applied materials & interfaces

scimago Q1

SJR: 2.058

CiteScore: 16.0

Impact factor: 8.3

ISSN: 19448244, 19448252

DOI: 10.1021/acsami.3c02278

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General Materials Science

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ACS applied materials & interfaces	ACS applied materials & interfaces, 1, 33.33% ACS applied materials & interfaces 1 publication, 33.33%
International Journal of Machine Tools and Manufacture	International Journal of Machine Tools and Manufacture, 1, 33.33% International Journal of Machine Tools and Manufacture 1 publication, 33.33%
Chemistry of Materials	Chemistry of Materials, 1, 33.33% Chemistry of Materials 1 publication, 33.33%
	1

	1 2
American Chemical Society (ACS)	American Chemical Society (ACS), 2, 66.67% American Chemical Society (ACS) 2 publications, 66.67%
Elsevier	Elsevier, 1, 33.33% Elsevier 1 publication, 33.33%
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Publisher

American Chemical Society (ACS)

Journal

ACS applied materials & interfaces

scimago Q1

SJR

2.058

CiteScore

16.0

Impact factor

8.3

ISSN

19448244 (Print)

19448252 (Electronic)

Dielectric-on-Dielectric Achieved on SiO₂ in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

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Dielectric-on-Dielectric Achieved on SiO₂ in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation