ACS applied materials & interfaces, volume 15, issue 19, pages 23501-23511
Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes
Lulu Wang
1, 2, 3
,
Shenyuan Yang
2, 4
,
Yaqi Gao
1, 2, 3
,
Jiankun Yang
1, 2, 3
,
Yiwei Duo
1, 2, 3
,
Shun Song
2, 4
,
Jianchang Yan
1, 2, 3
,
Junxi Wang
1, 2, 3
,
Jinmin Li
1, 2, 3
,
Tongbo Wei Tongbo Wei
1, 2, 3
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
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Publication type: Journal Article
Publication date: 2023-05-03
Journal:
ACS applied materials & interfaces
scimago Q1
SJR: 2.058
CiteScore: 16.0
Impact factor: 8.3
ISSN: 19448244, 19448252
PubMed ID:
37134325
General Materials Science
Found
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