ACS applied materials & interfaces, volume 15, issue 29, pages 35622-35630
In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas
Sheng-Tsung Hsiao
1
,
Makoto Sekine
1
,
Masaru Hori
1
Publication type: Journal Article
Publication date: 2023-07-13
Journal:
ACS applied materials & interfaces
scimago Q1
SJR: 2.058
CiteScore: 16.0
Impact factor: 8.3
ISSN: 19448244, 19448252
General Materials Science
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