ACS applied materials & interfaces, volume 17, issue 7, pages 11325-11333

Dual-Sided Multiband Ultraviolet Communication System Based on Ga₂O₃/GaN PN Junction Photodetectors

Zheng Shi ^{1, 2}

Xiang Gao ^{1, 2}

Mingyuan Xie ^{1, 2}

Tianlong Xie ^{1, 2}

Zhenxing Li ^{1, 2}

Haitao Zhao ²

Yong-Jin Wang ^{1, 2}

Xumin Gao ^{1, 2}

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province

Nanjing University of Posts and Telecommunications |

Publication type: Journal Article

Publication date: 2025-02-10

American Chemical Society (ACS)

Journal: ACS applied materials & interfaces

scimago Q1

SJR: 2.058

CiteScore: 16.0

Impact factor: 8.3

ISSN: 19448244, 19448252

DOI: 10.1021/acsami.4c20148

Copy DOI

Found

Create a profile to get free access to personal recommendations for colleagues and new articles.

Metrics

Cite this

GOST | RIS | BibTex | MLA

Found error?

Publisher

American Chemical Society (ACS)

Journal

scimago Q1

SJR

2.058

CiteScore

16.0

Impact factor

8.3

ISSN

19448244 (Print)

19448252 (Electronic)

Dual-Sided Multiband Ultraviolet Communication System Based on Ga2O3/GaN PN Junction Photodetectors