ACS Nano, volume 19, issue 10, pages 9435-9439
Comment on “Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide”
Hei Wong
1
1
Department of Electrical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR 999077, China
Publication type: Journal Article
Publication date: 2025-03-18
Journal:
ACS Nano
scimago Q1
SJR: 4.593
CiteScore: 26.0
Impact factor: 15.8
ISSN: 19360851, 1936086X
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