Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions
Тип публикации: Journal Article
Дата публикации: 2019-06-18
scimago Q1
wos Q1
БС1
SJR: 4.497
CiteScore: 24.2
Impact factor: 16.0
ISSN: 19360851, 1936086X
PubMed ID:
31244044
General Physics and Astronomy
General Materials Science
General Engineering
Краткое описание
We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$ down to 50 mK in the presence of both electric and magnetic field. The ability of a static electric field -applied by mean of a lateral gate electrode- to suppress the critical current $I_s$ in a proximity-induced superconductor is proven for both positive and negative gate voltage values. $I_s$ suppression reached typically about one third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to \textit{synthetic} proximity-induced superconductors.
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ГОСТ
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De Simoni G. et al. Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions // ACS Nano. 2019. Vol. 13. No. 7. pp. 7871-7876.
ГОСТ со всеми авторами (до 50)
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De Simoni G., Paolucci F., Puglia C., Giazotto F. Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions // ACS Nano. 2019. Vol. 13. No. 7. pp. 7871-7876.
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TY - JOUR
DO - 10.1021/acsnano.9b02209
UR - https://doi.org/10.1021/acsnano.9b02209
TI - Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions
T2 - ACS Nano
AU - De Simoni, G.
AU - Paolucci, F.
AU - Puglia, Claudio
AU - Giazotto, F.
PY - 2019
DA - 2019/06/18
PB - American Chemical Society (ACS)
SP - 7871-7876
IS - 7
VL - 13
PMID - 31244044
SN - 1936-0851
SN - 1936-086X
ER -
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BibTex (до 50 авторов)
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@article{2019_De Simoni,
author = {G. De Simoni and F. Paolucci and Claudio Puglia and F. Giazotto},
title = {Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions},
journal = {ACS Nano},
year = {2019},
volume = {13},
publisher = {American Chemical Society (ACS)},
month = {jun},
url = {https://doi.org/10.1021/acsnano.9b02209},
number = {7},
pages = {7871--7876},
doi = {10.1021/acsnano.9b02209}
}
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MLA
Скопировать
De Simoni, G., et al. “Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions.” ACS Nano, vol. 13, no. 7, Jun. 2019, pp. 7871-7876. https://doi.org/10.1021/acsnano.9b02209.