volume 12 issue 9 pages 4729-4733

Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode

Publication typeJournal Article
Publication date2012-08-30
scimago Q1
wos Q1
SJR2.967
CiteScore14.9
Impact factor9.1
ISSN15306984, 15306992
PubMed ID:  22934789
General Chemistry
Condensed Matter Physics
General Materials Science
Mechanical Engineering
Bioengineering
Abstract
While organic transistors' performances are continually pushed to achieve lower power consumption, higher working frequencies, and higher current densities, a new type of organic transistors characterized by a vertical architecture offers a radically different design approach to outperform its traditional counterparts. Naturally, the distinct vertical architecture gives way to different governing physical ground rules and structural key features such as the need for an embedded transparent electrode. In this paper, we make use of a zero-frequency electric field-transparent patterned electrode produced through block-copolymer self-assembly based lithography to control the performances of the vertical organic field effect transistor (VOFET) and to study its governing physical mechanisms. Unlike other VOFET structures, this design, involving well-defined electrode architecture, is fully tractable, allowing for detailed modeling, analysis, and optimization. We provide for the first time a complete account of the physics underpinning the VOFET operation, considering two complementary mechanisms: the virtual contact formation (Schottky barrier lowering) and the induced potential barrier (solid-state triode-like shielding). We demonstrate how each mechanism, separately, accounts for the link between controllable nanoscale structural modifications in the patterned electrode and the VOFET performances. For example, the ON/OFF current ratio increases by up to 2 orders of magnitude when the perforations aspect ratio (height/width) decreases from ∼0.2 to ∼0.1. The patterned electrode is demonstrated to be not only penetrable to zero-frequency electric fields but also transparent in the visible spectrum, featuring uniformity, spike-free structure, material diversity, amenability with flexible surfaces, low sheet resistance (20-2000 Ω sq(-1)) and high transparency (60-90%). The excellent layer transparency of the patterned electrode and the VOFET's exceptional electrical performances make them both promising elements for future transparent and/or efficient organic electronics.
Found 
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GOST |
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GOST Copy
Ben-sasson A., Tessler N. Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode // Nano Letters. 2012. Vol. 12. No. 9. pp. 4729-4733.
GOST all authors (up to 50) Copy
Ben-sasson A., Tessler N. Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode // Nano Letters. 2012. Vol. 12. No. 9. pp. 4729-4733.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1021/nl302163q
UR - https://doi.org/10.1021/nl302163q
TI - Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode
T2 - Nano Letters
AU - Ben-sasson, Ariel
AU - Tessler, Nir
PY - 2012
DA - 2012/08/30
PB - American Chemical Society (ACS)
SP - 4729-4733
IS - 9
VL - 12
PMID - 22934789
SN - 1530-6984
SN - 1530-6992
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2012_Ben-sasson,
author = {Ariel Ben-sasson and Nir Tessler},
title = {Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode},
journal = {Nano Letters},
year = {2012},
volume = {12},
publisher = {American Chemical Society (ACS)},
month = {aug},
url = {https://doi.org/10.1021/nl302163q},
number = {9},
pages = {4729--4733},
doi = {10.1021/nl302163q}
}
MLA
Cite this
MLA Copy
Ben-sasson, Ariel, and Nir Tessler. “Unraveling the Physics of Vertical Organic Field Effect Transistors through Nanoscale Engineering of a Self-Assembled Transparent Electrode.” Nano Letters, vol. 12, no. 9, Aug. 2012, pp. 4729-4733. https://doi.org/10.1021/nl302163q.